Electron Beam Lithography Controller Drift Compensation

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Solution Overview

Problem

Conventional electron beam lithography apparatuses face challenges in maintaining high-accuracy exposure over a long period due to environmental fluctuations such as air pressure and temperature changes, which cause beam irradiation position drift, making frequent calibrations necessary and reducing throughput.

Innovation Solution

An electron beam lithography apparatus that incorporates a controller to calculate and apply both constant and fluctuating correction coefficients, based on measured environmental factors, to adjust exposure data and ensure accurate beam deflection and focus correction, thereby maintaining high accuracy continuously after initial calibration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If calibration is performed at predetermined time intervals to maintain exposure accuracy, then manufacturing precision is improved, but productivity deteriorates due to frequent interruptions

Engineering Contradiction:
Improveexposure accuracyVSAvoidexposure throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent implements a feedback mechanism where the actual beam irradiation position is continuously monitored and compared with the intended position. Correction values are calculated based on the positional deviation and applied in real-time to compensate for drift, eliminating the need for frequent periodic calibrations and maintaining both high precision and productivity

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs self-correction by automatically detecting beam position drift and adjusting the beam irradiation position without external intervention. The correction unit autonomously modifies exposure data based on detected deviations, allowing continuous operation without manual calibration interruptions

Inventive Principle:
Principle #25Self-service

2Manufacturing precision

If environmental conditions such as air pressure and temperature are kept constant to prevent drift, then manufacturing precision is improved, but device complexity increases

Engineering Contradiction:
Improvebeam irradiation position stabilityVSAvoidenvironmental control system
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces complex mechanical/environmental control systems with an information-processing approach. Instead of physically stabilizing the environment, the system detects beam position drift caused by environmental fluctuations and computationally corrects the irradiation position, substituting physical stabilization with digital correction

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The system changes the parameter being controlled from environmental conditions (air pressure, temperature) to the beam irradiation position itself. By directly measuring and correcting position deviations rather than controlling environmental parameters, the system achieves stability without complex environmental control infrastructure

Inventive Principle:
Principle #35Parameter changes

3Productivity

If multiple stencil mask patterns are used with beam deflection to improve throughput, then productivity is improved, but manufacturing precision deteriorates due to increased drift sensitivity

Engineering Contradiction:
Improveexposure throughputVSAvoidbeam irradiation accuracy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent implements real-time feedback correction that compensates for beam position drift during multi-pattern exposure operations. The system continuously monitors the actual beam position and applies correction values to maintain accuracy across multiple stencil mask patterns and beam deflection operations, enabling high throughput without sacrificing precision

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for continuous, high-accuracy electron beam irradiation over an extended period by compensating for environmental changes, reducing the need for frequent calibrations and enhancing exposure processing throughput.

Implementation Method 1

an electron gun configured to emit an electron beam

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

a deflector configured to deflect the electron beam

Methodology Applied
Scientific EffectElectromagnetic deflection: Lorentz Force

Implementation Method 3

a focus corrector configured to correct a focus of the electron beam

Methodology Applied
Scientific EffectElectromagnetic focusing: Electromagnetic Induction

Implementation Method 4

a controller configured to correct the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time

Methodology Applied
Scientific EffectEnvironmental drift compensation:

Data Source

PatentUS8384052B2Electron beam lithography apparatus and electron beam lithography method
Publication Date: 2013.02.26 ADVANTEST CORP
  • US8384052B2 patent drawing
  • US8384052B2 patent drawing
  • US8384052B2 patent drawing

AI summary

An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity.