Electron Beam Metrology Guidance for Accurate Critical Dimension Measurement
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Solution Overview
Problem
Current metrology systems in semiconductor manufacturing face challenges in accuracy and reproducibility of critical dimension measurements due to empirical setup of parameters, leading to potential defects and reduced yield in IC production.
Innovation Solution
A metrology system that includes a processor configured to analyze acquired images, determine image and model parameters, generate simulated images, and output guidance parameters for optimized imaging conditions, improving measurement precision and accuracy by comparing critical dimension measurements with model parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If metrology parameters are set up empirically without ground truth knowledge, then the system is easier to operate, but measurement precision and accuracy deteriorate
Solution Approach 1:
The patent creates simulated images that copy the characteristics of actual metrology images using physics-based models. These simulated images serve as virtual references that eliminate the need for empirical parameter setup while providing ground truth for accurate measurements. The simulation model replicates the imaging process including noise, blur, and other artifacts to create realistic test data.
Solution Approach 2:
The system performs preliminary simulations before actual measurements to determine optimal metrology parameters. By pre-calculating the relationship between process parameters and imaging characteristics through simulations, the system establishes ground truth knowledge in advance, eliminating the need for empirical setup during operation while ensuring measurement accuracy.
2Measurement precision
If more simulated images and analyses are performed, then measurement accuracy improves, but device complexity increases
Solution Approach 1:
The patent systematically varies simulation parameters such as noise levels, blur amounts, and pattern dimensions to match real-world conditions. By adjusting these parameters in the simulation model, the system achieves accurate measurements without requiring complex hardware modifications. The parameter-based approach allows flexible adaptation to different measurement scenarios.
Solution Approach 2:
The simulation model acts as an intermediary between the physical measurement system and the analysis algorithm. It translates real-world imaging conditions into controlled virtual environments, simplifying the overall system by decoupling the complexity of physical variations from the measurement algorithm while maintaining measurement accuracy.
3Device complexity
If empirical parameter setup is used, then device complexity is reduced, but manufacturing precision deteriorates
Solution Approach 1:
The system uses simulated images to establish feedback loops for parameter optimization. By comparing simulated measurements with target values, the system automatically adjusts metrology parameters to achieve optimal manufacturing precision. This feedback mechanism eliminates empirical guesswork while maintaining manageable system complexity through automated control.
Solution Approach 2:
The simulation-based system enables self-service optimization where the metrology system automatically determines its own optimal parameters without external intervention. The built-in simulation model provides self-diagnosis and self-adjustment capabilities, improving manufacturing precision while keeping the system relatively simple through autonomous operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances defect identification and measurement accuracy, reducing human error and improving overall yield and throughput in semiconductor manufacturing by providing optimized imaging parameters.
Implementation Method 1
charged particle beam apparatus configured to acquire the image of the sample
Data Source
AI summary
Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.