Electron Beam Lithography Overlapping Pattern Method
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Solution Overview
Problem
Current electron beam lithography methods are limited by the need for precise control of beam position and speed, which restricts the ability to produce nanometer-scale patterns efficiently and quickly, especially when creating hole or dot arrays on substrates.
Innovation Solution
A method involving the use of an electron beam source to form overlapping patterns on a substrate with a threshold dose/energy, where the beam intensity and energy remain substantially unchanged, allowing for the simultaneous exposure of multiple elements, thereby reducing exposure time and increasing production speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If precise control of beam position and speed is implemented, then manufacturing precision is improved, but productivity deteriorates due to restricted ability to produce patterns efficiently and quickly
Solution Approach 1:
The patent segments the pattern formation process into two independent linear passes (first direction and second direction) rather than attempting to form complete patterns through complex multi-axis movements. This segmentation allows each pass to operate at high speed with simplified beam control, while the overlap region naturally defines the final pattern positions with high precision.
Solution Approach 2:
The patent transitions from traditional single-direction or multi-axis beam scanning to a two-dimensional approach where patterns are formed by the intersection of beams traveling in perpendicular directions. This dimensional change enables simultaneous pattern definition in both x and y directions through linear beam displacements, dramatically increasing productivity while maintaining nanometer-scale precision through the geometric intersection of beams.
2Manufacturing precision
If each individual hole or dot is addressed separately, then manufacturing precision is improved, but loss of time increases significantly
Solution Approach 1:
The patent segments the addressing process into two independent linear scanning operations instead of addressing each element individually through complex positioning. The first pass addresses elements along one axis, the second pass along the perpendicular axis, and the intersection of these passes defines the final element positions, eliminating the need for time-consuming individual element addressing.
Solution Approach 2:
The patent merges the addressing functions for both x and y coordinates into two simultaneous linear scanning operations. Instead of moving the beam to each element position sequentially through multi-axis control, the beam forms continuous linear patterns in both directions, and the combination of these patterns defines all element positions simultaneously, dramatically reducing total exposure time.
3Productivity
If beam intensity is increased to reduce exposure time, then productivity is improved, but manufacturing precision deteriorates due to mutual repulsion between electrons setting an upper limit for electron density
Solution Approach 1:
The patent segments the total exposure dose into two separate linear passes, each delivering a portion of the required dose. This segmentation allows each pass to use moderate beam intensity that avoids electron repulsion effects, while the cumulative effect of both passes achieves the complete exposure, maintaining both high precision and high productivity.
Solution Approach 2:
The patent performs preliminary exposure along one direction, then performs a second exposure along the perpendicular direction. This preliminary action approach allows each pass to use optimized beam parameters for precision, while the combined effect achieves the required total dose for high-speed exposure, avoiding the need to use excessively high intensities that would cause electron repulsion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required to fabricate high-quality hole or dot arrays by minimizing the time spent addressing each element, with a factor of over 10,000 reduction for a 1 cm×1 cm patterned area, while maintaining high accuracy and precision.
Implementation Method 1
providing an electron beam source (EBS) capable of emitting an electron beam towards the energy sensitive resist
Data Source
AI summary
The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g. exposed lines forming a grid, instead of addressing each dot or hole separately.