Electron Beam Mediated Plasma Etch for Microelectronic Workpieces
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Solution Overview
Problem
Current plasma etch and deposition processes for microelectronic workpieces face challenges in spatial control and chemistry management, particularly in atomic layer etch (ALE) and atomic layer deposition (ALD), leading to issues with feature size reduction and structure integrity during patterning and material layer formation.
Innovation Solution
The use of electron beams generated and controlled using DC biasing and RF plasma sources, applied to specific regions of microelectronic substrates within a processing chamber, to induce electron-stimulated chemistry and enhance the precision of etch and deposition processes, including the application of direct current and radio frequency biasing to manage plasma and electron beam currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing is used for atomic layer etch and deposition, then material removal and deposition can be achieved, but spatial control is problematic and chemistry control at surfaces is difficult
Solution Approach 1:
The patent segments the plasma processing into distinct electron beam-mediated steps, separating the chemistry control function from the material processing function. By using electron beams to mediate surface reactions, the system achieves independent control over chemical reactions and physical deposition/etching processes, resolving the contradiction between spatial control and chemistry management complexity.
Solution Approach 2:
The patent introduces electron beams as an intermediary between the plasma source and the substrate surface. These electron beams mediate the chemical reactions at the surface, enabling precise control over etch and deposition chemistry without direct plasma contact. This intermediary approach allows independent optimization of spatial control and chemistry control, resolving the technical contradiction.
2Length of moving object
If feature size is reduced to meet physical and electrical specifications, then device performance improves, but structure integrity becomes more difficult to maintain
Solution Approach 1:
The patent changes the fundamental parameters of the etching and deposition process by using electron beam-mediated reactions instead of conventional plasma chemistry. This enables atomic-layer precision in material removal and deposition, allowing feature sizes to be reduced while maintaining structure integrity through controlled, layer-by-layer processing that prevents damage to surrounding structures.
3Productivity
If electron beam currents of 50 to 100 milliamps are used to enhance productivity, then processing speed increases, but control of electron beam delivery becomes more challenging
Solution Approach 1:
The patent employs dynamic control of the electron beam system, using pulsed DC biasing and RF plasma sources to modulate electron beam delivery. This dynamic approach allows the system to deliver high currents (50-100 mA) for enhanced productivity while maintaining precise spatial and temporal control through rapid switching and modulation, resolving the contradiction between speed and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the selectivity and anisotropy of plasma etch and deposition processes, enabling more precise control over material removal and deposition, particularly in ALE and ALD, by generating dangling bonds on the substrate surface that facilitate targeted etching and deposition, thus addressing spatial control issues and enhancing productivity.
Implementation Method 1
delivering the electron beam to one or more selected regions of the substrate to cause electron stimulated chemistry to be induced only for the one or more selected regions
Implementation Method 2
The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques
Implementation Method 3
powering coils positioned around the processing chamber to sustain plasma within the processing chamber
Data Source
AI summary
Disclosed embodiments apply electron beams to substrates for microelectronic workpieces to improve plasma etch and deposition processes. The electron beams are generated and directed to substrate surfaces using DC (direct current) biasing, RF (radio frequency) plasma sources, and/or other electron beam generation and control techniques. For certain embodiments, DC-biased RF plasma sources, such as DC superposition (DCS) or hybrid DC-RF sources, are used to provide controllable electron beams on surfaces opposite a DC-biased electrode. For certain further embodiments, the DC-biased electrode is pulsed. Further, electron beams can also be generated through electron beam extraction from external and/or non-ambipolar sources. The disclosed techniques can also be used with additional electron beam sources and/or additional etch or deposition processes.