Electron Blocking Layer Structure for Thin p-Side LED ESD Tolerance
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Solution Overview
Problem
Existing semiconductor devices face challenges in improving light-emission efficiency and electrical static discharge (ESD) tolerance while maintaining a thin p-side region.
Innovation Solution
The semiconductor device incorporates a first aluminum-containing layer between the active region and the electron blocking layer, and a second aluminum-containing layer on the side of the electron blocking layer opposite to the first aluminum-containing layer, with specific thickness ratios and band gaps to enhance hole injection efficiency and ESD tolerance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the p-side region is made thinner to improve device performance, then light-emission efficiency is improved, but ESD tolerance deteriorates
Solution Approach 1:
The p-side region is divided into multiple functional layers including the first aluminum-containing layer (closer to active region), the electron blocking layer, and the second aluminum-containing layer (farther from active region). This segmentation allows each layer to perform specific functions: the first aluminum-containing layer enhances hole injection, the electron blocking layer prevents electron leakage, and the second aluminum-containing layer provides ESD protection, thereby resolving the contradiction between thinning for efficiency and maintaining ESD tolerance.
Solution Approach 2:
The patent employs composite material structure by combining aluminum-containing layers with the semiconductor layer to form a multi-layered p-side region. The aluminum-containing layers have different band gaps and thicknesses, creating a composite structure that simultaneously achieves high hole injection efficiency and robust ESD tolerance, allowing the overall p-side region to remain thin while maintaining both performance metrics.
2Device complexity
If the p-side region is made thinner to improve device performance, then device complexity is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise parameter ranges for the aluminum-containing layers: the first aluminum-containing layer has thickness of 1-20 nm, the second aluminum-containing layer has thickness of 1-50 nm, and their thickness ratio is controlled between 0.1-5. These parameter specifications enable manufacturers to achieve the desired performance with clear manufacturing targets, balancing device simplification with manufacturability.
3Reliability
If aluminum-containing layers are added to enhance hole injection and ESD tolerance, then device performance is improved, but device complexity increases
Solution Approach 1:
The aluminum-containing layers serve multiple functions simultaneously: they enhance hole injection efficiency into the active region, provide ESD protection, and contribute to the overall structural integrity of the p-side region. This multi-functionality reduces the need for separate dedicated layers for each function, thereby limiting the increase in device complexity while achieving multiple performance improvements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves hole injection efficiency, alleviates p-type dopant diffusion issues, and enhances ESD tolerance, allowing for a thinner p-side region without compromising performance.
Implementation Method 1
each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer
Data Source
AI summary
A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.