Electron Multiplier Resistance Layer for Wide-Temperature Stability
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Solution Overview
Problem
Conventional atomic layer deposition (ALD) micro-channel plates (MCPs) using resistance films do not have excellent temperature coefficient characteristics, limiting their use in a wide range of temperatures, particularly in applications like image intensifiers and mass spectrometers, where temperature variations affect the resistance value and current flow.
Innovation Solution
An electron multiplier structure is developed using a substrate with a secondary electron emitting layer and a resistance layer formed by two-dimensionally arranging metal particles with positive temperature coefficient resistance values, sandwiched between insulating material, to stabilize resistance value variations across a wider temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resistance film is formed by the ALD method using conventional materials, then the film formation precision is improved, but the temperature coefficient of resistance value deteriorates
Solution Approach 1:
The patent uses a composite structure consisting of an insulating material layer and a metal particle layer. The metal particles (such as Pt, Ir, Mo, or W) are dispersed within the insulating material (such as Al2O3 or SiO2), creating a composite resistance layer that achieves both precise film formation through ALD and excellent temperature coefficient characteristics due to the positive temperature coefficient of the metal particles.
Solution Approach 2:
The patent changes the material parameters by selecting metal particles with positive temperature coefficients (such as Pt, Ir, Mo, or W) and controlling their size (0.1-10 nm diameter) and concentration. By adjusting these parameters, the resistance layer achieves a temperature coefficient within ±1000 ppm/K, significantly improving temperature stability while maintaining manufacturing precision through ALD.
2Ease of operation
If the resistance value varies with temperature, then the current flow stability deteriorates, but the use environment temperature range is limited
Solution Approach 1:
The patent changes the temperature coefficient parameter by using metal particles with positive temperature coefficients instead of conventional negative temperature coefficient materials. This parameter change stabilizes the resistance value across a wide temperature range of -60°C to +60°C, ensuring current flow stability and expanding the usable temperature range of the electron multiplier.
Solution Approach 2:
The patent applies local quality by dispersing metal particles with specific properties (positive temperature coefficient, 0.1-10 nm size) within the insulating material matrix. This localized arrangement of specially selected metal particles throughout the resistance layer provides uniform temperature compensation, stabilizing resistance and current flow across the entire device while maintaining a wide operating temperature range.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively improves the temperature characteristics of the resistance value, allowing the electron multiplier to maintain stability and performance from low to high temperatures, reducing the influence of environmental temperature on current flow.
Implementation Method 1
a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature coefficient are two-dimensionally arranged on a surface in the state of being adjacent to each other with a part of the insulating material interposed therebetween
Implementation Method 2
an electron multiplier having an electron multiplication function... a secondary electron emitting surface which emits secondary electrons in response to incidence of the charged particles
Data Source
Figure 1A~1B
Figure 2A~2C
Figure 3
AI summary
The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. In the electron multiplier, a resistance layer sandwiched between a substrate and a secondary electron emitting layer comprised of an insulating material is configured using a single metal layer in which a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic are two-dimensionally arranged on a layer formation surface, which is coincident with or substantially parallel to a channel formation surface of the substrate, in the state of being adjacent to each other with a part of the first insulating material interposed therebetween.