Thermally Managed Electron Path for Cryogenic Thermal Noise Reduction
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Solution Overview
Problem
Current thermal management techniques for electronic devices operating at very low temperatures, such as quantum computers, are complex and ineffective due to electrons decoupling from the lattice at low temperatures, making it difficult to remove heat generated within the device.
Innovation Solution
The technique involves increasing the electrostatic potential of electrons to reduce their density and temperature by causing them to flow up a potential hill, allowing for selective cooling of devices and junctions, which can be used alone or in conjunction with conventional cooling methods to achieve very low operating temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional cooling techniques are used for very low temperature devices, then the lattice can be cooled, but electrons decouple from phonons at around 50 mK making lattice cooling ineffective
Solution Approach 1:
The patent introduces a separate electron cooling path that acts as an intermediary system. Instead of relying solely on lattice cooling, cold electrons are injected through a porous metal filter that serves as a mediator between the electron gas and the cold reservoir, enabling effective cooling even when electron-phonon coupling is weak
Solution Approach 2:
The cooling system is segmented into two independent paths: one for cooling the lattice (phonons) and another for cooling the electrons. This segmentation allows each path to be optimized independently, with the electron cooling path using a porous metal filter and cold electron injection separate from the lattice cooling mechanism
2Temperature
If electrons are cooled before entering the device using porous metal, then electron temperature is reduced, but heat generated within the device cannot be removed
Solution Approach 1:
The system performs preliminary cooling of electrons before they enter the device by passing them through a porous metal filter at a cold stage. This preliminary action prepares the electrons in a cold state, and the continuous circulation ensures that heat generated during operation can be carried away by the circulating cold electrons
Solution Approach 2:
The electron cooling system operates continuously with electrons circulating through the porous metal filter and back through the device. This continuous circulation ensures that cooling action is constantly applied, maintaining low electron temperature and enabling continuous heat removal from the device
3Power
If electron density is increased to improve conductivity, then current flow improves, but thermal noise and temperature increase
Solution Approach 1:
The system changes the temperature parameter of the electrons independently from their density. By injecting pre-cooled electrons through the porous metal filter, the system maintains high electron density for good conductivity while keeping the temperature parameter low, achieving both high power and low thermal noise
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the absolute temperature of electrons in electronic devices by at least 10% to 20% below 150° Kelvin, and can cool devices to as low as 0.3° Kelvin, enhancing thermal management and reducing thermal noise.
Implementation Method 1
a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel
Implementation Method 2
portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel
Data Source
AI summary
A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.