Electronic Component Sulfur-Enriched Ni Plated Layer Hydrogen Trapping
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Solution Overview
Problem
Conventional electronic components experience degradation in electrical characteristics due to the diffusion of hydrogen atoms into the body portion, particularly when a Ni plated layer is formed, leading to a decrease in insulation resistance.
Innovation Solution
The electronic component incorporates a base electrode layer with a first Ni plated layer having a sulfur concentration of not less than 5.2×10^18 atoms/cm^3, which acts as a hydrogen trap, and an upper plated layer, to prevent hydrogen diffusion into the body portion, thereby maintaining insulation resistance and reducing component size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a Ni plated layer is formed on the base electrode layer, then solder wettability is improved, but hydrogen atoms diffuse into the body portion causing degradation of electrical characteristics
Solution Approach 1:
A first Ni plated layer with high sulfur concentration (≥5.2×10^18 atoms/cm³) is introduced as an intermediary between the base electrode layer and the upper plated layer. This layer acts as a mediator that traps hydrogen atoms through sulfur-hydrogen interactions, preventing hydrogen diffusion into the body portion while still allowing the upper plated layer to provide good solder wettability.
Solution Approach 2:
The sulfur concentration in the first Ni plated layer is specifically controlled to be not less than 5.2×10^18 atoms/cm³. By changing the chemical composition parameter (sulfur concentration) of the Ni plated layer, the layer gains hydrogen trapping capability while maintaining its electrical and soldering functions.
2Productivity
If the component size is reduced, then productivity is improved, but insulation resistance may be compromised
Solution Approach 1:
The hydrogen atoms that would normally cause harmful diffusion into the body portion are converted into a beneficial effect by being trapped in the first Ni plated layer. The sulfur in this layer binds with hydrogen atoms, transforming the harmful hydrogen diffusion problem into a beneficial hydrogen trapping mechanism that protects the body portion even in smaller component designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces or prevents the degradation of electrical characteristics by trapping hydrogen atoms in the Ni plated layer, enhancing insulation resistance and improving solder wettability, while allowing for a smaller component size without compromising insulation resistance.
Implementation Method 1
The first Ni plated layer has a S (sulfur) concentration of not less than about 5.2×10^18 atoms/cm³. The first Ni plated layer acts as a hydrogen trap to prevent hydrogen diffusion into the body portion
Data Source
AI summary
An electronic component includes a body portion and an external electrode on a surface of the body portion. The external electrode includes a base electrode layer, a first Ni plated layer, and an upper plated layer. The first Ni plated layer is provided on the base electrode layer. The upper plated layer is provided above the first Ni plated layer. The first Ni plated layer has a S concentration of not less than about 5.2×1018 atoms/cm3.