Electronic Package Layout Using Conductive Pillars to Cut TSV Count
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Solution Overview
Problem
The existing chip packaging technologies face challenges with increased fabrication complexity, cost, and reliability issues due to the need for larger bonding areas and mismatched thermal expansion coefficients, leading to warpage and poor electrical connections in 3D IC structures.
Innovation Solution
An electronic package design incorporating an encapsulating layer with conductive pillars and a smaller interposer board, reducing the number of through-silicon vias and using these pillars as electric transmission paths for certain functions, while embedding the interposer board in the encapsulating layer to match thermal expansion coefficients.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the bonding area of the through silicon interposer is increased to accommodate more semiconductor chips, then the number of through-silicon vias increases, but the fabrication complexity and cost increase, and the yield decreases
Solution Approach 1:
The patent divides the through silicon interposer into multiple smaller interposer boards. Each smaller interposer board has fewer through-silicon vias, reducing the fabrication complexity and increasing yield. The smaller interposer boards are then arranged and bonded to the package substrate in a matrix pattern to achieve the required total bonding area. This segmentation approach allows the system to scale up the bonding area without proportionally increasing the complexity of fabricating each individual interposer.
2Area of stationary object
If the bonding area of the through silicon interposer is increased to accommodate more semiconductor chips, then the number of through-silicon vias increases, but the thermal stress distribution becomes uneven, causing warpage
Solution Approach 1:
By dividing the large interposer into multiple smaller interposer boards, the thermal mass and thermal stress concentration are reduced. Each smaller interposer experiences more uniform thermal expansion, and the gaps between them allow for stress relief. This segmentation prevents the warpage issues that occur in large monolithic interposers with mismatched CTE between the interposer, encapsulant, and package substrate.
3Area of stationary object
If more through-silicon vias are disposed in the through silicon interposer, then the bonding area increases, but the fabrication time and cost increase
Solution Approach 1:
The fabrication of multiple smaller interposer boards with fewer through-silicon vias can be performed in parallel rather than sequentially drilling and filling a large number of vias in one large interposer. This segmentation enables concurrent processing, reducing the overall fabrication time. Additionally, the smaller interposers can be fabricated using standard processes without requiring excessive aspect ratio control that would slow down production.
4Area of stationary object
If more through-silicon vias are disposed in the through silicon interposer, then the bonding area increases, but the fabrication cost increases
Solution Approach 1:
Dividing the interposer into multiple smaller boards reduces the total number of through-silicon vias that need to be fabricated, as each smaller interposer has fewer vias. This reduces material consumption (silicon, copper, dielectric materials) and processing costs. The smaller interposers can also be fabricated using more cost-effective processes without the need for precise aspect ratio control required in large interposers with deep vias.
Data Source
AI summary
An electronic package is provided. The electronic package includes an encapsulating layer encapsulating a plurality of conductive pillars and an interposer board that has through-silicon vias. An electronic component is disposed on the encapsulating layer and electrically connected to the conductive pillars and the through-silicon vias. The conductive pillars act as an electric transmission path of a portion of electric functions of the electronic component. Therefore, the number of the through-silicon vias is reduced, and the fabrication time and chemical agent cost are reduced. Also, the through silicon interposer of a large area can be replaced by a smaller one, and the yield is increased. Further, a method of fabricating an electronic package is provided.


