Electroplated Corrective Layers for IC Substrate Warping
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Solution Overview
Problem
Integrated circuit (IC) packages experience warping due to internal stresses during fabrication, leading to manufacturability issues, electrical failures, and complications in z-height miniaturization, with no existing method to effectively address these challenges.
Innovation Solution
The introduction of corrective layers on the inactive side of the IC package via electroplating or electrodeposition, with parameters determined by the semiconducting die and desired degree of warping, to induce counter-warping and correct inherent warping, using conductive seed layers and metallic components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If corrective layers are deposited via electroplating to induce counter-warping, then warping control is improved, but process complexity increases
Solution Approach 1:
The patent applies corrective layers via electroplating before final packaging and testing stages, proactively compensating for warping that will occur during subsequent fabrication processes. This preliminary action prevents warping-related defects rather than correcting them later, improving manufacturing precision while managing process complexity through strategic timing.
Solution Approach 2:
The patent controls warping by adjusting electroplating parameters including current density, plating time, electrolyte composition, and layer thickness. These parameter changes enable precise control over the magnitude and direction of induced warping, allowing optimization of the counter-warping effect while managing process complexity through parameter tuning rather than additional process steps.
2Manufacturing precision
If corrective layers are applied to counter-warp the substrate, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent integrates electroplating of corrective layers into the continuous fabrication flow, performing warping compensation during existing process windows rather than as a separate post-processing step. This continuity approach minimizes production time loss while achieving precise warping correction, as the electroplating process occurs alongside other fabrication activities.
Solution Approach 2:
The patent applies corrective layers with thicknesses that may exceed the minimum required for warping compensation, allowing for subsequent selective removal or using the excess as a buffer against variations in warping behavior. This partial/excessive action ensures adequate warping correction while managing production time by avoiding multiple iterative applications.
3Manufacturing precision
If electrodeposition parameters are optimized for precise warping control, then manufacturing precision improves, but process complexity increases
Solution Approach 1:
The patent implements feedback mechanisms where warping measurements from test structures or previous batches inform adjustments to electroplating parameters for subsequent production. This feedback loop enables precise warping control through data-driven parameter optimization, managing complexity by using measured results to guide parameter selection rather than requiring complex real-time control systems.
Solution Approach 2:
The patent performs parameter optimization and characterization studies in advance to establish lookup tables or standard operating procedures for different substrate types and warping scenarios. This preliminary work reduces in-production complexity by pre-determining optimal parameters, allowing operators to select appropriate settings without complex real-time calculations or adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively corrects warping by applying corrective layers based on predetermined parameters, minimizing defects and enabling miniaturization efforts by stabilizing the IC package, allowing for precise control of warping direction and degree.
Implementation Method 1
the inactive side (e.g., face) may have one or more corrective layers deposited thereon via electroplating or other like electrodeposition techniques
Implementation Method 2
corrective layers deposited over the seed layer
Data Source
AI summary
An integrated circuit (IC) package incorporating controlled induced warping is disclosed. The IC package includes an electronic substrate having an active side upon which semiconducting dies and functional circuits have been lithographed or otherwise fabricated, leading to an inherent warping in the direction of the active side. One or more corrective layers may be deposited to the opposing, or inactive, side of the semiconducting die via electroplating in order to induce corrective warping of the electronic substrate back toward the horizontal (e.g., in the direction of the inactive side) to a desired degree.


