Electroplated Passivation Layer for Semiconductor Cost Reduction
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Solution Overview
Problem
Conventional semiconductor processes with photolithography and etching for forming passivation layers are costly and difficult to scale down in cost effectively.
Innovation Solution
The semiconductor process employs electroplating to form a passivation layer on a conductive substrate, using a sacrificial layer on the metal pattern that is removed after passivation layer formation, reducing costs and using electrophoretic paint for protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If photolithography and etching process are used to form passivation layer, then passivation layer can be formed with good insulation and protection, but manufacturing cost increases significantly
Solution Approach 1:
The patent replaces the conventional photolithography and etching process with an electroplating process to form the passivation layer. Instead of using photosensitive materials and chemical etching, the invention uses electroplating to deposit insulating material directly onto the substrate, thereby eliminating the need for expensive photolithography equipment and processes while maintaining the protective and insulating functions of the passivation layer.
Solution Approach 2:
The patent changes the fundamental formation mechanism of the passivation layer from chemical deposition and etching to electrochemical deposition. By altering the process parameters from photolithography-based chemical reactions to electroplating-based electrical deposition, the invention achieves cost reduction while preserving the essential insulation and protection properties of the passivation layer.
2Ease of manufacture
If electroplating process is used to form passivation layer, then manufacturing cost decreases significantly, but process complexity and control difficulty increase
Solution Approach 1:
The patent applies a sacrificial layer onto the metal pattern before performing the electroplating process. This preliminary action ensures that the electroplating process deposits material only in the desired areas and prevents direct contact between the electroplating solution and the metal pattern, thereby simplifying process control and reducing complexity despite the adoption of electroplating.
Solution Approach 2:
The sacrificial layer serves as an intermediary between the electroplating process and the metal pattern. It mediates the interaction by providing a protective barrier during electroplating and enabling precise control over where the passivation layer is deposited, thus reducing process complexity and making the electroplating method more manageable.
3Manufacturing precision
If sacrificial layer is used during electroplating, then passivation layer can be formed precisely on metal pattern, but additional process steps are required
Solution Approach 1:
The patent extracts or removes the sacrificial layer after the electroplating process is complete. By taking out the sacrificial layer after it has served its purpose of enabling precise passivation layer formation, the invention achieves manufacturing precision while minimizing the lasting impact on process complexity, as the sacrificial layer is a temporary element that is removed after use.
Solution Approach 2:
The sacrificial layer is designed as a disposable, temporary component that is used only during the electroplating process to ensure precision. After serving its function of enabling precise passivation layer deposition, it is removed and discarded. This approach allows for high manufacturing precision without permanently increasing device complexity, as the sacrificial layer is a temporary, low-cost element.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly decreases the manufacturing cost of semiconductor processes while providing effective protection for metal patterns against environmental factors.
Implementation Method 1
a passivation layer is formed on the conductive substrate by performing a first electroplating process to cover the metal pattern
Implementation Method 2
the conductive substrate is used as an electrode for performing an electroplating process to form a passivation layer on the conductive substrate
Implementation Method 3
A method for removing the sacrificial layer may be plasma etching process or wet etching process
Data Source
AI summary
A semiconductor process includes the following steps. Firstly, a conductive substrate is provided. Then, at least one insulating pattern is formed on the conductive substrate. Thereafter at least one metal pattern is formed on the insulating pattern. After that, a passivation layer is formed on the conductive substrate to cover the metal pattern by an electroplating process.