Electroplating Shield for Varying Size Semiconductor Features
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Solution Overview
Problem
Conventional semiconductor metallization processes require multiple consecutive electroplating steps with photoresist masks to create features of varying sizes, which are expensive and inefficient.
Innovation Solution
A method using a shield positioned offset from the semiconductor wafer surface to alter local deposition rates during electroplating, allowing for simultaneous formation of features of varying sizes using a single photoresist mask, by adjusting the shield's distance and topography to control deposition rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple consecutive electroplating steps with photoresist masks are used to create features of varying sizes, then manufacturing precision is improved, but device complexity and production cost increase
Solution Approach 1:
The patent applies local quality by using a shield with varying proximity to the wafer surface at different locations. The shield is positioned closer to the wafer in some areas and farther in others, creating location-specific deposition rates. This allows different feature sizes to be formed simultaneously across the wafer surface during a single plating step, eliminating the need for multiple sequential steps while maintaining precise control over feature dimensions.
2Manufacturing precision
If multiple consecutive electroplating steps with photoresist masks are used to create features of varying sizes, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent merges multiple electroplating operations into a single simultaneous plating step. By using a strategically positioned shield that creates varying deposition rates across the wafer surface, the process combines what would traditionally require multiple sequential steps into one operation. This dramatically improves productivity and throughput while maintaining the ability to create features of varying sizes with precise control.
3Manufacturing precision
If multiple consecutive electroproting steps with photoresist masks are used to create features of varying sizes, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent applies preliminary action by pre-positioning the shield at specific distances from the wafer surface before the electroplating process begins. The shield's position is carefully predetermined to create the desired variation in deposition rates across different areas of the wafer. This pre-configuration allows a single plating step to achieve what would otherwise require multiple steps, significantly reducing process time while maintaining manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and cost-effective simultaneous plating of features with varying diameters and heights on a semiconductor substrate, reducing the need for multiple plating steps and improving process efficiency.
Implementation Method 1
depositing at least one metal onto the wafer by electroplating to simultaneously form metallurgical features of varying sizes on the wafer based on the shield altering local deposition rates
Data Source
AI summary
Techniques for simultaneously plating features of varying sizes on a semiconductor substrate are provided. In one aspect, a method for electroplating includes: placing a shield over a wafer, offset from a surface of the wafer, which covers portions of the wafer and leaves other portions of the wafer uncovered; and depositing at least one metal onto the wafer by electroplating to simultaneously form metallurgical features of varying sizes on the wafer based on the shield altering local deposition rates for the portions of the wafer covered by the shield. An electroplating apparatus is also provided.