Electrochemical Plating With Supercritical Fluid for Trench Filling
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Solution Overview
Problem
Current deposition processes in semiconductor manufacturing, such as PVD and ALD, face limitations like poor coverage, low throughput, and defects in trench filling due to high aspect ratios and gas formation during electrochemical plating (ECP) processes.
Innovation Solution
The introduction of a supercritical fluid into the electroplating solution during the ECP process, which dissolves gases and reduces defects by eliminating high entry voltage and peak current, and enhances trench filling capabilities by improving wetting ability and reducing voids.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes (PVD, ALD) are used, then manufacturing complexity is reduced, but trench filling quality deteriorates due to poor coverage and defects
Solution Approach 1:
The patent changes the physical-chemical parameters of the plating environment by introducing supercritical fluid (scCO2) into the electroplating bath. This creates a unique deposition environment with enhanced mass transport, improved wetting, and suppressed hydrogen evolution, enabling high-quality trench filling that conventional processes cannot achieve
Solution Approach 2:
Supercritical carbon dioxide acts as an intermediary substance in the electroplating process. It dissolves in the plating bath to create a modified environment that enhances ion transport to the substrate surface, improves solution wetting of trench structures, and suppresses harmful gas evolution, thereby improving trench filling quality
2Productivity
If electrochemical plating is used to improve deposition rate, then productivity increases, but gas formation causes defects in the deposited material
Solution Approach 1:
The patent converts the harmful effect of gas formation during electrochemical plating into a beneficial outcome. By introducing supercritical CO2, the process suppresses hydrogen evolution reactions that cause defects, while the scCO2 environment enables faster mass transport and higher deposition rates without compromising material quality
3Reliability
If high aspect ratio trenches are filled using conventional processes, then device functionality is achieved, but coverage and filling quality deteriorate
Solution Approach 1:
The patent utilizes the unique fluid dynamics of supercritical carbon dioxide to improve trench filling. The scCO2-modified electrolyte exhibits enhanced wetting properties and improved penetration into high aspect ratio structures, enabling complete and defect-free filling that conventional liquid electrolytes cannot achieve
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ECP process with supercritical fluid significantly reduces defects and voids, improves trench filling, and allows for more efficient semiconductor manufacturing by minimizing substrate imperfections and increasing productivity.
Implementation Method 1
The introduction of a supercritical fluid into the electroplating solution during the ECP process, which dissolves gases and reduces defects
Implementation Method 2
enhances trench filling capabilities by improving wetting ability and reducing voids
Implementation Method 3
apparatus and process of electro-chemical plating
Data Source
AI summary
An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.