Electroplating Bubble Removal via Ultrasonic Cavitation
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Solution Overview
Problem
In semiconductor electroplating, small bubbles in the electroplating solution can form pores in the wafer lines, severely affecting signal transmission rates and reducing yield as semiconductor devices shrink in size.
Innovation Solution
An electroplating method involving the addition of particles and ultrasonic waves to the electroplating solution to remove bubbles, followed by the removal of these particles before the electroplating process, ensuring all bubbles are eliminated, thereby preventing pore formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If copper is deposited by electrochemical method in liquid, then copper lines can be formed in semiconductor devices, but small bubbles in the liquid can lead to pore formation in wafer electroplating
Solution Approach 1:
The patent applies ultrasonic vibration to the electroplating solution before and during the electroplating process. The ultrasonic waves generate cavitation effects that effectively remove bubbles from the solution and from the wafer surface, preventing pore formation in the copper lines while maintaining the electrochemical deposition process
Solution Approach 2:
The patent performs preliminary ultrasonic treatment of the electroplating solution before introducing the wafer, and continues ultrasonic treatment during plating. This preliminary action removes bubbles in advance, ensuring the solution is bubble-free before the critical electroplating process begins, thereby preventing defect formation
2Reliability
If pores exist in lines, then signal transmission rate of semiconductor devices is severely affected, but bubbles in electroplating solution cause pore formation
Solution Approach 1:
Ultrasonic vibration is applied continuously to eliminate bubbles that would otherwise become trapped in the copper lines during electroplating. This ensures pore-free lines with reliable signal transmission properties
Solution Approach 2:
The patent replaces conventional mechanical bubble removal methods (such as stirring or degassing) with ultrasonic vibration, which more effectively eliminates bubbles at the molecular level and prevents their incorporation into the deposited copper structure
3Length of moving object
If semiconductor device size is reduced, then device scaling is achieved, but pore formation has more severe impact on signal transmission
Solution Approach 1:
As semiconductor devices scale down to smaller dimensions, the patent employs ultrasonic vibration to ensure complete bubble removal, since even tiny bubbles can critically affect signal transmission in miniaturized circuits. The ultrasonic treatment becomes increasingly important as feature sizes decrease
4Object-affected harmful factors
If ultrasonic waves are applied to electroplating solution, then bubbles are removed by oscillation, but particles need to be added and subsequently removed
Solution Approach 1:
The patent introduces particles as an intermediary medium that enhances ultrasonic bubble removal efficiency. These particles act as nucleation sites for cavitation and help dislodge bubbles from the solution and wafer surface. After bubble removal, the particles are filtered out, completing their temporary mediating role
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes all bubble types from the electroplating solution, enhancing the signal transmission rate and increasing the yield of semiconductor products by preventing pore formation in wafer lines.
Implementation Method 1
applying ultrasonic waves to the electroplating solution, so as to remove bubbles in the electroplating solution by oscillation
Data Source
AI summary
Embodiments of the present application provide an electroplating method and an electroplating apparatus. The electroplating method includes: before putting wafers into an electroplating solution to undergo an electroplating process, adding particles into the electroplating solution, and applying ultrasonic waves to the electroplating solution, so as to remove bubbles in the electroplating solution by oscillation; removing the particles in the electroplating solution; and putting the wafers into the electroplating solution to undergo the electroplating process.