Electropositive Metal Layers via ALD and CVD
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in depositing electropositive metals due to high energy requirements and affinity for carbon, nitrogen, and oxygen, leading to the formation of undesirable non-stoichiometric phases that degrade film performance.
Innovation Solution
The use of atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes to form thin, conformal films of electropositive metals with minimal carbon, nitrogen, and oxygen impurities, employing precursor molecules with direct metal-silicon or metal-germanium bonds and inert gas purging to maintain low temperatures and consistent deposition conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CVD or ALD processes are used to deposit electropositive metals, then metal layers can be formed, but high energy is required and carbon, nitrogen, and oxygen impurities are incorporated leading to non-stoichiometric phases
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using novel organometallic precursors with direct metal-silicon or metal-germanium bonds instead of conventional precursors. This fundamental parameter change allows deposition at lower temperatures while achieving stoichiometric metal layers with minimal impurities, resolving the contradiction between energy consumption and film quality
Solution Approach 2:
The patent employs composite precursor molecules that combine electropositive metal atoms with silicon or germanium in direct bonds. These composite precursors enable controlled decomposition and deposition that reduces impurity incorporation and energy requirements, addressing both the stoichiometry and energy concerns simultaneously
2Reliability
If conventional deposition processes are used, then metal layers can be deposited, but carbon, nitrogen, and oxygen impurities are incorporated degrading film performance
Solution Approach 1:
The patent creates an inert deposition environment by using precursors with direct metal-silicon or metal-germanium bonds that are less reactive toward carbon, nitrogen, and oxygen. The process conditions are optimized to maintain this inert environment, preventing impurity incorporation and ensuring high film performance with precise impurity control
Solution Approach 2:
The silicon or germanium atoms in the precursor molecules act as intermediaries that protect the electropositive metal atoms from reacting with carbon, nitrogen, and oxygen during deposition. This intermediary mechanism ensures that the metal layers are formed with minimal impurities, directly improving film performance
3Manufacturing precision
If thin conformal films are deposited using ALD or CVD, then high-purity metal layers can be achieved, but the process complexity increases
Solution Approach 1:
The patent segments the deposition process into distinct sequential steps characteristic of ALD, where precursors are introduced, reacted, and purged in separate stages. This segmentation enables precise control over film conformality and composition, achieving thin conformal films with high purity while managing process complexity through systematic step breakdown
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the deposition of high-purity electropositive metal layers with low impurity levels, suitable for advanced semiconductor devices such as transistors and interconnects, maintaining performance and reducing defects.
Implementation Method 1
The deposition of electropositive metal and highly electropositive metals can present challenges for the manufacture of semiconductor devices comprising these metallic elements
Implementation Method 2
In a typical ALD process, a substrate surface to be coated with a film is exposed to gas phase reactants (precursors) sequentially. Repeated exposure of the surface to the reactants sequentially creates a thin conformal product layer on the surface
Data Source
AI summary
Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 {acute over (Å)} thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals.