Mobile Electrostatic Carrier for In-Tool Wafer Particle Abatement

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Solution Overview

Problem

Current semiconductor wafer processing tools face challenges in efficiently removing foreign materials without disrupting production, as existing methods are costly and time-consuming, especially in highly integrated manufacturing where traditional tacky wafers and tapes are not effective.

Innovation Solution

A mobile electrostatic carrier (MESC) system that uses electrostatic forces to attract and remove foreign materials from processing tools, employing multiple adhesion modes and a capacitance charging interface to securely bond and release semiconductive wafers, allowing for efficient cleaning without full teardown.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If traditional tacky wafers and tapes are used to remove foreign materials, then foreign materials can be removed, but the wafers are hard to remove and residues are not easy to clean, especially in highly integrated semiconductor manufacturing

Engineering Contradiction:
Improveforeign material removal effectivenessVSAvoidwafer removal difficulty and residue cleaning
Core Design Contradiction:
Object-generated harmful factorsVSEase of manufacture

Solution Approach 1:

The patent replaces mechanical adhesion systems (tacky wafers and tapes) with an electrostatic field-based system. The MESC uses electrostatic fields to attract and hold foreign materials through capacitive coupling, allowing for clean, residue-free removal without mechanical contact or adhesive residues that contaminate wafers

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The system dynamically changes the electrostatic field parameters (voltage, capacitance) to control the attraction and release of foreign materials. By adjusting the capacitive charging interface, the MESC can selectively attract particles during cleaning mode and release them for removal, providing precise control without permanent adhesion

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If full teardown and clean is performed to remove foreign materials from processing tools, then complete cleaning is achieved, but processing tools are out of production for extended periods and costs increase

Engineering Contradiction:
Improveforeign material removal completenessVSAvoidproduction downtime and cost
Core Design Contradiction:
Object-generated harmful factorsVSProductivity

Solution Approach 1:

The patent extracts the foreign material removal function from the main processing tool by introducing a separate, mobile MESC system. The MESC can be moved into the processing tool, perform cleaning operations, and exit without requiring the processing tool to be disassembled or shut down for extended periods

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The MESC acts as an intermediary cleaning device that enters the processing tool environment temporarily to perform foreign material removal. It uses its electrostatic field to attract and remove particles from surfaces, then exits without requiring the processing tool to undergo complete teardown

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If MESC is used to remove foreign materials electrostatically, then production can continue without shutdown, but the system complexity increases with multiple adhesion modes and capacitance charging interface

Engineering Contradiction:
Improvecontinuous production capabilityVSAvoidMESC system structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The MESC is designed as a universal platform that can operate in multiple modes (attracting foreign materials, holding wafers, releasing particles) using the same electrostatic field generation mechanism. The capacitive charging interface provides multi-functionality by controlling different aspects of the electrostatic interaction through a single integrated system

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The electrostatic field system is self-regulating through capacitive coupling, where the field strength and attraction forces automatically adjust based on the presence and properties of foreign materials or wafers. The system requires minimal external control beyond initiating the charging sequence

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables effective and cost-efficient removal of foreign materials from wafer processing tools without shutting down operations, maintaining production efficiency and reducing residue issues in highly integrated semiconductor manufacturing.

Implementation Method 1

The charged MESC can then use electrostatic forces to attract the FM's from the processing tools or specific parts of the processing tools

Methodology Applied
Scientific EffectElectrostatic forces: Electrostatics

Implementation Method 2

A mobile electrostatic carrier (MESC) system that uses electrostatic forces to attract and remove foreign materials from processing tools, employing multiple adhesion modes and a capacitance charging interface to securely bond and release semiconductive wafers

Methodology Applied
Scientific EffectElectrostatic field: Electric Field

Data Source

PatentUS11772136B2System and method for particle abatement in a wafer processing tool
Publication Date: 2023.10.03 SMITH ERYN
  • US11772136B2 patent drawing
  • US11772136B2 patent drawing
  • US11772136B2 patent drawing

AI summary

A method for particle abatement in a wafer processing tool implements at least one cleaning-purposed mobile electrostatic carrier (MESC) including electrostatic field generating (EFG) circuits. Each EFG circuit is charged with the cleaning-purposed MESC. The cleaning-purposed MESC is then loaded into the wafer processing tool in a facedown orientation. A normal-purposed MESC is loaded into the wafer processing tool in a faceup orientation. Next, foreign materials are bonded to the cleaning-purposed MESC as the cleaning-purposed MESC is moved along a processing path through the wafer processing tool in the facedown orientation. The normal-purposed MESC travels the processing path during normal operation of the wafer processing tool in the faceup orientation. The cleaning-purposed MESC is then unloaded from the wafer processing tool. Next, the foreign materials are debonded from the cleaning-purposed MESC by discharging each EFG circuit with the cleaning-purposed MESC. Finally, the foreign materials are removed off the cleaning-purposed MESC.