Electrostatic Chuck Bias Layout for Lower Dielectric Loss
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Solution Overview
Problem
Current plasma processing apparatuses face limitations in power efficiency due to constraints on increasing capacitance between the substrate and bias electrode, which affects etching rates and plasma processing productivity.
Innovation Solution
The plasma processing apparatus incorporates a first power supply part with a first electrode layer and a first adsorption electrode layer on the substrate mounting portion, and a second power supply part with a second electrode layer and a second adsorption electrode layer on the edge ring mounting portion, allowing direct power supply to the substrate and edge ring without dielectric loss, thereby enhancing power efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a bias electrode is provided within the electrostatic chuck to improve power efficiency, then power efficiency is improved, but dielectric loss occurs due to the dielectric layer between the electrode and substrate
Solution Approach 1:
The invention extracts the bias electrode from the interior of the electrostatic chuck and relocates it to the outer periphery, specifically on the edge ring mounting portion. This extraction eliminates the dielectric layer between the bias electrode and substrate, thereby removing the source of dielectric loss while maintaining the substrate adsorption function through separate adsorption electrodes.
Solution Approach 2:
The invention segments the electrostatic chuck into distinct functional zones: a substrate mounting portion with adsorption electrodes for holding the substrate, and an edge ring mounting portion with a bias electrode for plasma processing. This segmentation allows the bias electrode to operate independently without requiring a dielectric layer, thus eliminating dielectric loss while maintaining substrate adsorption capability.
2Productivity
If capacitance between substrate and bias electrode is increased to improve etching rates, then etching rates improve, but device complexity increases
Solution Approach 1:
By extracting the bias electrode from the electrostatic chuck interior and placing it on the edge ring mounting portion, the invention eliminates the need for complex dielectric layer management while maintaining effective capacitance for etching. The bias electrode directly faces the substrate edge region, providing sufficient capacitance for high etching rates without adding structural complexity.
Solution Approach 2:
The invention applies local quality by concentrating the bias electrode function on the edge ring mounting portion where it directly interfaces with the substrate edge region. This localized placement provides targeted capacitance enhancement for etching in the critical edge region without requiring complex overall structural changes to the electrostatic chuck.
3Device complexity
If a single power supply system is used for both substrate and edge ring mounting portions, then device complexity is reduced, but independent control of bias powers is lost
Solution Approach 1:
The invention segments the power supply system into at least two independent power supply parts: one for the substrate mounting portion and another for the edge ring mounting portion. This segmentation enables independent control of bias powers applied to different regions of the substrate, allowing optimized plasma processing parameters for both central and edge regions simultaneously.
Solution Approach 2:
The invention implements local quality by providing independent power control to different spatial regions of the electrostatic chuck. The power supply part for the edge ring mounting portion can independently adjust bias power for edge region processing, while the power supply part for the substrate mounting portion controls the central region, enabling region-specific process optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves power efficiency in plasma processing by reducing dielectric loss and enabling better control over plasma processing parameters, such as etching rates and ion implantation, while minimizing residual adsorption forces and allowing independent control of bias powers.
Implementation Method 1
an electrostatic chuck disposed on the base, and comprising a substrate mounting portion, and an edge ring mounting portion on which an edge ring surrounding a substrate mounted on the substrate mounting portion is mounted
Implementation Method 2
a first bias power source electrically connected to the first electrode layer, and wherein the second power supply part comprises: a second electrode layer formed on an edge ring mounting surface of the edge ring mounting portion; a second adsorption electrode layer disposed under the second electrode layer in the edge ring mounting portion; and a second bias power source electrically connected to the second electrode layer
Data Source
AI summary
There is a plasma processing apparatus comprising: a plasma processing chamber; an electrostatic chuck disposed on a base, and comprising a substrate mounting portion and an edge ring mounting portion; and at least one of a first power supply part that supplies power to the substrate mounting portion and a second power supply part that supplies power to the edge ring mounting portion, wherein the first power supply part comprises: a first electrode layer formed on the substrate mounting portion; a first adsorption electrode layer disposed under the first electrode layer; and a first bias power source connected to the first electrode layer, and wherein the second power supply part comprises: a second electrode layer formed on the edge ring mounting portion; a second adsorption electrode layer disposed under the second electrode layer; and a second bias power source connected to the second electrode layer.