Electrostatic Chuck Cooling Zones for Wafer Edge Temperature Control
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Solution Overview
Problem
Current electrostatic chuck designs limit the tunability of temperature and hydrogen concentration at the edge of a wafer during high-density plasma processing, leading to non-uniformity and issues like gate-induced drain leakage.
Innovation Solution
The electrostatic chuck is redesigned with specific structural modifications, including varying widths and pressures of channels and bands, along with a controller to manage temperature and hydrogen concentration across the wafer surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If gas pressure in cooling channels is increased to improve temperature control at wafer edge, then temperature uniformity improves, but gas leakage becomes problematic
Solution Approach 1:
The cooling system is segmented into multiple independent channels (first cooling channel, second cooling channel, third cooling channel) with different pressure zones. The first cooling channel operates at higher pressure for effective cooling, while the second and third channels operate at lower pressures to prevent gas leakage, allowing each segment to function at optimal pressure without compromising overall system reliability
Solution Approach 2:
Different regions of the electrostatic chuck are assigned different cooling channel configurations and pressure levels according to their specific thermal requirements. The first cooling channel serves regions requiring aggressive cooling with higher pressure, while other channels serve regions where lower pressure is sufficient, creating localized quality in pressure distribution that prevents leakage while maintaining temperature uniformity
2Adaptability or versatility
If conventional electrostatic chuck design is used, then manufacturing simplicity is maintained, but temperature and hydrogen concentration tunability at wafer edge is limited
Solution Approach 1:
The electrostatic chuck is divided into multiple functional zones with distinct cooling channels (first, second, third cooling channels) and bands (first inner band, outer band) that can be independently controlled. This segmentation enables different regions to be tuned to different temperature and hydrogen concentration levels, significantly improving adaptability while the modular nature of the segmentation keeps manufacturing complexity manageable
Solution Approach 2:
The invention adds a pressure dimension to temperature control by implementing multiple cooling channels that can operate at different pressure levels. This dimensional addition to the control space allows independent tuning of temperature and hydrogen concentration at different radial positions of the wafer, transforming a single-parameter control system into a multi-dimensional control system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This redesign achieves improved temperature uniformity, reduced hydrogen non-uniformity, and minimized gate-induced drain leakage, enhancing the performance of semiconductor processes.
Implementation Method 1
electrostatic chuck comprising a top surface, a bottom surface and a controller
Implementation Method 2
an inner channel (IC) with an IC width surrounding the central region, an inner band (IB) with an IB width surrounding the inner channel, an outer channel (OC) with an OC width surrounding the inner band
Data Source
AI summary
Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.