Electrostatic Chuck Edge Cleaning With a Removable Cathode Ring
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Solution Overview
Problem
Existing plasma-enhanced chemical vapor deposition (PECVD) chamber cleaning methods generate broad plasmas that inadequately clean the edge of the electrostatic chuck, leading to thick polymer deposits and inefficiencies in maintaining film quality and consistency.
Innovation Solution
A removable cathode ring is used to generate a high-density, low-energy plasma locally at the edge of the electrostatic chuck, focusing cleaning efforts on the high deposition areas using a capacitively coupled plasma at higher pressures in a narrow gap.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If broad plasma is generated throughout the chamber using process chamber resources, then general cleaning coverage is achieved, but cleaning effectiveness at the electrostatic chuck edge is insufficient
Solution Approach 1:
The patent applies local quality by introducing a cathode ring that generates concentrated plasma specifically at the electrostatic chuck edge where thick polymer deposits accumulate. This localized plasma source provides high cleaning effectiveness at the problematic edge region without requiring broad plasma generation throughout the entire chamber, thus resolving the contradiction between general coverage and edge cleaning effectiveness.
Solution Approach 2:
The cleaning function is segmented into two parts: the cathode ring handles the difficult-to-clean electrostatic chuck edge area with focused plasma, while the rest of the chamber receives general cleaning from the broader plasma environment. This segmentation allows each component to optimize its cleaning performance for its specific region, improving overall cleaning effectiveness without wasting resources.
2Reliability
If broad plasma is generated throughout the chamber, then general cleaning is performed, but process chamber resources are excessively consumed
Solution Approach 1:
By placing a cathode ring at the electrostatic chuck edge, the system creates a localized plasma source that concentrates cleaning power exactly where it is needed most. This eliminates the waste of generating broad plasma throughout the entire chamber when only the edge region requires intensive cleaning, thereby reducing process chamber resource consumption while maintaining cleaning quality consistency.
Solution Approach 2:
The cathode ring is powered by the process chamber's existing power resources, allowing it to generate its own localized plasma for cleaning purposes. This self-service capability enables the system to perform targeted edge cleaning using its own resources rather than requiring additional chamber-wide plasma generation, reducing overall resource consumption.
3Productivity
If localized plasma cleaning is applied at the electrostatic chuck edge, then cleaning efficiency is improved, but device complexity increases
Solution Approach 1:
The cathode ring serves multiple functions: it acts as a plasma generation source for localized cleaning, utilizes the existing electrostatic chuck structure as its mounting base, and leverages the process chamber's power resources. This multi-functionality allows the system to achieve improved cleaning efficiency without proportionally increasing device complexity, as the cathode ring integrates with existing chamber components rather than requiring entirely new systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This localized plasma cleaning effectively removes polymer deposits while preserving the integrity of the deposition process, enhancing cleaning efficiency and film quality.
Implementation Method 1
power the electrostatic chuck for a cleaning period while the cathode ring is disposed over the substrate support surface
Implementation Method 2
generate a high-density, low-energy plasma locally at the edge of the electrostatic chuck, focusing cleaning efforts on the high deposition areas using a capacitively coupled plasma
Implementation Method 3
focusing cleaning efforts on the high deposition areas using a capacitively coupled plasma at higher pressures in a narrow gap
Data Source
AI summary
The present disclosure generally provides substrate processing systems and methods thereof. The substrate processing systems include a substrate processing chamber including a transfer port. A substrate support assembly is disposed within the substrate processing chamber. The substrate support assembly having an electrostatic chuck and a substrate support surface. A transport robot is configured to transport a cathode ring in and out of the substrate processing chamber through the transfer port. A controller is configured to cause the substrate processing system to place the cathode ring on the substrate support surface of the substrate support assembly using the transport robot, and power the electrostatic chuck for a cleaning period while the cathode ring is disposed over the substrate support surface