Electrostatic Chuck Heater Electrode Layout for Wafer Edge Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electrostatic chuck heaters suffer from deterioration in deposition and temperature uniformity at the wafer edge due to gas flow vortices during processing, leading to inconsistent heat treatment of semiconductor wafers.
Innovation Solution
An electrostatic chuck heater design featuring a ground electrode and an electrostatic chuck electrode spaced a predetermined distance apart, both on the same plane, with the electrostatic chuck electrode being of a sheet or mesh type, and a molybdenum connecting member, improves deposition and temperature uniformity by preventing wafer edge rising during gas flow.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a pocket is formed in the ceramic heater to secure the wafer, then the wafer can be held in place, but gas flow vortices are produced at the wafer edge causing deterioration in deposition and temperature uniformity
Solution Approach 1:
The electrode structure is segmented into a ground electrode and a separate electrostatic chuck electrode positioned at a predetermined distance. This segmentation allows the electrostatic chuck electrode to specifically address the wafer edge region, counteracting gas flow vortices and improving deposition uniformity at the edges while the ground electrode provides overall grounding.
Solution Approach 2:
The electrostatic chuck electrode acts as an intermediary element between the ground electrode and the wafer edge region. By positioning this intermediate electrode at a specific distance from the ground electrode, it mediates the electric field distribution to prevent wafer edge rising caused by gas flow, thereby improving temperature and deposition uniformity.
2Device complexity
If the electrostatic chuck electrode is positioned close to the ground electrode, then the structure is compact, but deposition uniformity deteriorates due to gas flow vortices
Solution Approach 1:
The key parameter changed is the distance between the ground electrode and the electrostatic chuck electrode. By optimizing this distance to a predetermined value, the patent achieves the right balance between structural compactness and deposition uniformity. This parameter optimization prevents gas flow vortices from causing wafer edge rising while maintaining a reasonable device structure.
3Productivity
If process gas flows during heating, then the wafer can be processed, but temperature uniformity deteriorates due to wafer edge rising from gas flow vortices
Solution Approach 1:
The electrostatic chuck electrode applies a preliminary counteracting force to prevent wafer edge rising before it occurs. By positioning the electrode appropriately and applying electrostatic forces, it counteracts the upward force caused by gas flow vortices at the wafer edges, thereby maintaining temperature uniformity during processing while allowing normal gas flow for processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces temperature deviations across the wafer surface, enhancing deposition and temperature uniformity by up to 36% compared to traditional designs, as demonstrated by measured temperature ranges at the wafer edges.
Implementation Method 1
a ceramic plate that generates heat by being supplied with electric power from an external electrode. The ceramic plate 100 includes a heating element embedded in a ceramic sintered body and having predetermined resistance.
Implementation Method 2
a ground electrode and an electrostatic chuck electrode spaced a predetermined distance apart from an outer side of the ground electrode
Data Source
AI summary
The present invention relates to an electrostatic chuck heater and a manufacturing method therefor and, more particularly, to an electrostatic chuck heater comprising: a ground electrode; and an electrostatic chuck electrode spaced a predetermined distance apart from the outside of the ground electrode, wherein the heater can reduce the phenomenon of rising of a wafer edge and thus can significantly reduce the temperature deviation according to positions on a heating surface of an object, such as a wafer, so as to increase the temperature uniformity of the heating surface.