Electrostatic Chuck Electrode Layout for Uniform Plasma Processing
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Solution Overview
Problem
Existing plasma processing technologies face challenges in uniformly controlling substrate temperature and efficiently supplying electric power to electrodes due to capacitive coupling between electrode portions and heating devices, particularly when using direct current pulse power, leading to noise components and ion energy peaks.
Innovation Solution
The proposed plasma processing apparatus incorporates a substrate support structure with a ceramic member containing gas distribution spaces, annular and central electrodes, and a voltage pulse generator, along with DC and RF power sources, to efficiently supply power and control temperature distribution, minimizing noise interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If multiple electrodes are disposed inside the electrostatic chuck to supply electric power, then the substrate temperature control is improved, but the device complexity increases due to the need for multiple connectors and power sources
Solution Approach 1:
The patent implements nested connectors where the first annular connector and second annular connector are positioned concentrically, with the first connector above the second connector. The vertical connectors extend through multiple levels, creating a nested configuration that supplies power to multiple electrodes (first central electrode, second central electrode, and annular electrode) while maintaining a compact structure. This nesting approach allows multiple electrodes to be controlled through an organized hierarchical connector system, improving temperature uniformity without excessive complexity.
2Productivity
If DC pulse power is used for substrate processing, then the processing efficiency is improved, but noise components and ion energy peaks occur due to capacitive coupling between electrodes
Solution Approach 1:
The patent extracts and separates the capacitive coupling issue by implementing distinct electrical connection paths for different electrodes. The first annular connector connects to the first central electrode, while the second annular connector connects to the second central electrode and annular electrode through vertical connectors. This separation allows DC pulse power to be applied efficiently to the substrate support while minimizing noise components generated by capacitive coupling between different electrode portions, as each electrode has its own dedicated connection path.
3Power
If multiple vertical and annular connectors are inserted into the ceramic member to connect electrodes, then the electric power supply to multiple electrodes is improved, but the manufacturing difficulty increases
Solution Approach 1:
The patent segments the electrical connection system into distinct functional components: first vertical connectors extending from the first annular connector, second vertical connectors extending from the second annular connector, and annular connectors positioned at different heights. This segmentation allows each connector to be manufactured and positioned independently, with the first annular connector above the second annular connector in the vertical direction. The segmented approach improves power supply efficiency to multiple electrodes while making the overall assembly more manageable through modular construction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances temperature uniformity and ion energy control, enabling effective plasma processing without noise interference, thus improving the quality and consistency of semiconductor manufacturing processes.
Implementation Method 1
a gas distribution space, at least one gas inlet extending from a lower surface of the ceramic member to the gas distribution space and a plurality of gas outlets extending from the gas distribution space to the substrate support surface or the ring support surface
Implementation Method 2
a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector and configured to generate a DC signal
Implementation Method 3
a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector and configured to generate a sequence of voltage pulses
Implementation Method 4
a central heater electrode inserted into the ceramic member and having one or more divided regions
Data Source
AI summary
There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.