Electrostatic Chuck Attraction Force Enhancement

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Solution Overview

Problem

Existing electrostatic chucks face challenges in maintaining a strong attraction force without increasing the power of the DC voltage, which can lead to leakage of heat transfer gas during the processing of wafers.

Innovation Solution

An electrostatic attraction method that involves introducing a gas and generating plasma using high-frequency power, applying a DC voltage with a polarity opposite to the attraction polarity to the electrostatic chuck, extinguishing the plasma, and then stopping the DC voltage, followed by reapplying a DC voltage with the opposite polarity to attract the processing target object, thereby increasing the attraction force without increasing the DC voltage power.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Force

If the power of DC voltage is increased to maintain strong attraction force, then the attraction force is improved, but heat transfer gas leakage occurs

Engineering Contradiction:
Improveattraction forceVSAvoidheat transfer gas leakage
Core Design Contradiction:
ForceVSObject-generated harmful factors

Solution Approach 1:

The method applies a DC voltage with opposite polarity to the electrostatic chuck before the wafer is placed on it. This preliminary action of applying opposite polarity voltage prepares the electrostatic chuck to prevent heat transfer gas leakage when the wafer is subsequently attracted, without requiring high voltage during the actual attraction phase

Inventive Principle:
Principle #10Preliminary action

2Force

If the DC voltage power is increased to maintain strong attraction force, then the attraction force is improved, but resource usage and running costs increase

Engineering Contradiction:
Improveattraction forceVSAvoidresource usage and running costs
Core Design Contradiction:
ForceVSLoss of energy

Solution Approach 1:

The method uses periodic application of DC voltage with opposite polarity before wafer placement, followed by normal attraction voltage. This periodic action allows the system to maintain strong attraction force when needed while reducing energy consumption during idle periods by applying only the preliminary opposite polarity voltage

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

By applying the opposite polarity voltage in advance before the wafer is placed, the system prepares the electrostatic chuck to achieve strong attraction without requiring continuously high voltage, thereby reducing overall resource usage and running costs

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively enhances the attraction force of the electrostatic chuck, preventing heat transfer gas leakage while minimizing resource usage and running costs.

Implementation Method 1

The electrostatic chuck electrostatically attracts and holds a processing target object on the electrostatic chuck by a Coulomb force generated by a DC voltage

Methodology Applied
Scientific EffectCoulomb force: Coulomb's Law

Implementation Method 2

a gas is introduced into a chamber in which the processing target object is to be processed before a processing target object is placed on a stage within the chamber, and plasma is generated by applying a high frequency power

Methodology Applied
Scientific EffectPlasma generation: Plasma

Data Source

PatentUS10832930B2Electrostatic attraction method
Publication Date: 2020.11.10 TOKYO ELECTRON LTD
  • US10832930B2 patent drawing
  • US10832930B2 patent drawing
  • US10832930B2 patent drawing

AI summary

Disclosed is an electrostatic attraction method including: a first step in which a gas is introduced into a chamber in which the processing target object is to be processed before a processing target object is placed on a stage within the chamber, and plasma is generated by applying a high frequency power; a second step in which a DC voltage having a polarity opposite to a polarity of a DC voltage to be applied when attracting the processing target object, to an electrostatic chuck provided on the stage after the first step; a third step where extinguishing of the plasma by stopping application of the high frequency power is performed after the second step; and a fourth step where application of the DC voltage is stopped after the third step.