Electrostatic Chuck Gas Passage Layout for Wafer Temperature Uniformity
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Solution Overview
Problem
Existing electrostatic chucks experience non-uniform heat exchange between the ceramic plate and the wafer due to varying gas flow rates through gas outflow passages, leading to temperature unevenness on the wafer during processing.
Innovation Solution
The member for a semiconductor manufacturing apparatus includes a common gas passage connected to a smaller number of gas inflow passages, with gas outflow passages closer to the inflow passage having higher resistance, ensuring uniform gas flow rates through multiple outflow passages by adjusting passage resistance using spiral portions or porous structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If gas outflow passages are connected to a common gas passage with multiple inflow passages, then gas can be supplied to multiple locations, but the flow rates through different gas outflow passages become non-uniform causing temperature unevenness on the wafer
Solution Approach 1:
The patent applies local quality by giving different gas passage resistances to different gas outflow passages based on their location. Gas outflow passages closer to the gas inflow passage are assigned larger resistance, while those farther away have smaller resistance. This localized differentiation compensates for distance-related flow variations and achieves uniform gas flow rates across all passages, ensuring uniform temperature distribution on the wafer.
2Productivity
If multiple gas inflow passages are used to supply gas to multiple gas outflow passages, then gas supply capacity is improved, but the number of external gas introduction tubes increases and maintenance complexity increases
Solution Approach 1:
The patent merges multiple gas inflow functions into a single gas inflow passage that connects to a common gas passage. This common gas passage then distributes gas to multiple gas outflow passages through carefully designed resistance values. This consolidation reduces the number of external gas introduction tubes from multiple to one, simplifying the overall structure while maintaining the ability to supply gas to multiple locations.
3Manufacturing precision
If gas outflow passages have different lengths or cross-sectional areas to adjust resistance, then flow rate uniformity is improved, but the structure becomes more complex and manufacturing becomes more difficult
Solution Approach 1:
The patent changes the resistance parameter of gas outflow passages by modifying geometric parameters such as the length and cross-sectional area of spiral portions or porous sections. By adjusting these dimensional parameters, the gas passage resistance is tuned to achieve uniform flow rates. This approach allows resistance adjustment through relatively simple structural modifications rather than complex multi-parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design minimizes temperature unevenness on the wafer by maintaining consistent gas flow rates across the outflow passages, enhancing processing uniformity and reducing maintenance complexity through easily replaceable insulating sleeves.
Implementation Method 1
a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage
Data Source
AI summary
A member for a semiconductor manufacturing apparatus, the member has a wafer placement surface and includes: a plurality of gas outflow passages each having an opening on the wafer placement surface; a common gas passage that is in communication with the plurality of gas outflow passages; and at least one gas inflow passage that is in communication with the common gas passage from a surface of the member for a semiconductor manufacturing apparatus that is on an opposite side from the wafer placement surface, the number of the at least one gas inflow passage being smaller than the number of the gas outflow passages in communication with the common gas passage. Among the plurality of gas outflow passages, a gas outflow passage closer to the gas inflow passage has a larger gas passage resistance than a gas outflow passage farther from the gas inflow passage.