Electrostatic Chuck Gasket for Uniform RF Power Distribution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electrostatic chuck designs face challenges in uniformly delivering RF power to an RF electrode embedded within the ceramic material, leading to non-uniform plasma formation and potential arcing during semiconductor substrate processing.
Innovation Solution
A substrate processing apparatus with a temperature-controlled RF powered baseplate and an annular electrically conductive gasket that extends through the bond layer to directly couple the baseplate to the RF electrode, ensuring uniform RF power delivery and reducing the risk of arcing by maintaining the same voltage across the RF powered baseplate and electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If RF power is delivered to an electrode embedded within ceramic material using conventional methods, then the electrode can be heated, but the RF power distribution becomes non-uniform leading to non-uniform plasma formation and potential arcing
Solution Approach 1:
A conductive gasket is introduced as an intermediary component between the RF-powered baseplate and the embedded RF electrode. The gasket extends through the ceramic material to make direct electrical contact with the electrode, serving as a mediator that enables controlled RF power transfer while maintaining voltage equality between the baseplate and electrode, thereby preventing arcing and ensuring uniform plasma formation.
2Stability of the object's composition
If the RF electrode is embedded within the ceramic material, then the electrode structure is integrated and stable, but the RF power delivery path becomes complex and non-uniform
Solution Approach 1:
The RF power delivery system is segmented into distinct functional components: the RF-powered baseplate, the conductive gasket that penetrates the ceramic, and the embedded RF electrode. This segmentation allows each component to perform its specific function optimally while simplifying the overall power delivery path and enabling uniform RF distribution to the electrode.
3Strength
If a bond layer is used to bond the baseplate to the ceramic layer, then mechanical bonding is achieved, but electrical coupling between the baseplate and RF electrode is blocked
Solution Approach 1:
The conductive gasket serves as a dual-function intermediary that penetrates through the insulating bond layer. It maintains the mechanical integrity provided by the bond layer while simultaneously establishing the necessary electrical coupling between the RF-powered baseplate and the embedded RF electrode, thus resolving the conflict between mechanical strength and electrical conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables uniform RF power distribution to the RF electrode, reducing non-uniform heating and the likelihood of arcing, thereby enhancing the consistency and safety of semiconductor substrate processing.
Implementation Method 1
at least one annular electrically conductive gasket extending through or around a bond layer, which bonds the temperature controlled RF powered baseplate to the layer of ceramic material, and electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode
Implementation Method 2
a RF energy source adapted to energize the process gas into a plasma state in the processing chamber
Implementation Method 3
The layer of ceramic material includes a support surface adapted to electrostatically clamp a substrate during substrate processing
Data Source
AI summary
An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.


