Electrostatic Chuck Two-Stage Heating for Semiconductor Substrate Warpage
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Solution Overview
Problem
Large-diameter semiconductor substrates experience significant warpage during high-temperature heat-treating, leading to impaired flatness and increased production variation, which complicates ion implantation and affects the yield of semiconductor devices.
Innovation Solution
A method involving an electrostatic chuck where the temperature is raised in two stages: initially to a lower standby temperature to secure substrate adsorption, then to a higher treatment temperature for uniform heating, with controlled voltage adjustments to manage warpage and electrostatic adsorption force.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a large-diameter semiconductor substrate is heat-treated to a high temperature, then the treatment temperature is improved, but the substrate flatness deteriorates due to warpage
Solution Approach 1:
The patent applies preliminary heating to raise the substrate temperature to a first temperature before ion implantation, and maintains this temperature during the implantation process. This preliminary thermal preparation reduces thermal stress and prevents warpage during the subsequent high-temperature treatment, thereby maintaining substrate flatness while achieving the required treatment temperature.
2Reliability
If the substrate temperature is raised to a high temperature for ion implantation, then the ion implantation effect is improved, but the substrate warpage increases
Solution Approach 1:
The patent changes the temperature parameter by implementing a two-stage temperature control: first raising the substrate to a first temperature before ion implantation, then maintaining or adjusting to a second temperature during implantation. This parameter optimization ensures effective ion implantation while controlling thermal expansion and minimizing warpage.
3Productivity
If a large-diameter substrate is used to increase production capacity, then the productivity is improved, but the warpage amount increases remarkably
Solution Approach 1:
The patent applies preliminary heating to large-diameter substrates before ion implantation to reduce thermal stress. This preliminary thermal preparation prevents remarkable warpage even when using large-diameter substrates for increased production capacity, thereby maintaining both productivity and substrate flatness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production variation, maintains substrate flatness, and improves the yield of semiconductor devices by ensuring uniform temperature distribution and secure substrate retention during high-temperature processing.
Implementation Method 1
an electrostatic chuck has been widely used which adsorbs and retains a semiconductor substrate by means of an electrostatic adsorption force
Implementation Method 2
an electrostatic chuck which is configured to be integral with a heater for adjusting a temperature of a semiconductor substrate
Data Source
AI summary
A method for manufacturing a semiconductor device in accordance with the present invention includes the steps of preparing a semiconductor substrate, placing the semiconductor substrate on an electrostatic chuck, chucking the semiconductor substrate after raising a temperature of the electrostatic chuck to a first temperature, raising a temperature of the electrostatic chuck to a second temperature which is higher than the above-described first temperature in a state where the semiconductor substrate is chucked, and performing a treatment to the semiconductor substrate in a state where a temperature of the electrostatic chuck is maintained at the above-described second temperature.