Electrostatic Chuck Plate Layout for High-Temperature Wafer Processing
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Solution Overview
Problem
Existing electrostatic chuck devices face challenges in high-temperature wafer processing due to thermal stress, leading to issues like peeling of bonded parts.
Innovation Solution
The electrostatic chuck device incorporates a dielectric substrate with an adsorption electrode, a metal base for support, and a focus ring on the outer periphery, featuring a double-sided adsorption mechanism with varying protrusion densities to enhance reliability at high temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If an electrostatic chuck device is used for high-temperature wafer processing, then high-temperature processing capability is improved, but thermal stress causes peeling of bonded parts
Solution Approach 1:
The electrostatic chuck plate is divided into multiple independent adsorption regions (wafer adsorption region and focus ring adsorption region) with separate adsorption electrodes. This segmentation allows each region to independently accommodate thermal expansion differences, preventing stress concentration and peeling at bonded interfaces during high-temperature processing.
Solution Approach 2:
Different regions of the electrostatic chuck plate are equipped with different adsorption electrodes (wafer adsorption electrode for the wafer region, focus ring adsorption electrode for the focus ring region) with different electrical connection structures. This local differentiation enables tailored stress distribution and adsorption force control in each region, preventing peeling under thermal stress while maintaining high-temperature processing capability.
2Force
If a dielectric substrate with adsorption electrode is used, then wafer adsorption capability is improved, but thermal stress causes peeling at the bonded part
Solution Approach 1:
The adsorption electrode is segmented into multiple independent electrodes (wafer adsorption electrode and focus ring adsorption electrode) positioned in different regions of the dielectric substrate. Each electrode can be independently controlled to provide appropriate adsorption force while distributing thermal stress, preventing peeling at the bonded interface between the dielectric substrate and mounting substrate.
Solution Approach 2:
Different adsorption electrodes are positioned at different locations on the dielectric substrate (wafer adsorption electrode on the wafer placement surface side, focus ring adsorption electrode on the focus ring placement surface side) with different electrical connection structures. This local differentiation enables optimized adsorption force distribution and stress management in each region, maintaining reliable bonded part integrity during high-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures high reliability and prevents damage from thermal stress, allowing for effective high-temperature wafer processing without stress on the contact portions between the electrostatic chuck plate and the metal base.
Implementation Method 1
an adsorption electrode 6 positioned in the dielectric substrate 2; The electrostatic chuck plate 10 has a ring adsorption region 2d, which is adsorbed to the focus ring 5
Implementation Method 2
a dielectric substrate 2 having a placement surface 2a on which a wafer W is placed and an adsorption electrode 6 which is positioned in the dielectric substrate 2
Data Source
AI summary
An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.