Electrostatic Chuck Interface Using Organic Backside Layer

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Solution Overview

Problem

Existing substrate processing technologies face challenges in minimizing damage to substrates and substrate supports due to friction and thermal stress during plasma processing, leading to particle generation and reduced cooling efficiency.

Innovation Solution

The implementation of an organic layer with a low friction coefficient on the substrate back surface, combined with an electrostatic chuck, to stabilize substrate positioning and reduce friction and thermal stress, thereby minimizing damage and particle generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a substrate is placed directly on an electrostatic chuck for plasma processing, then the substrate can be held firmly by electrostatic attraction, but friction and thermal stress cause damage to the substrate and substrate support, leading to particle generation

Engineering Contradiction:
Improvesubstrate positioning stabilityVSAvoidfriction damage and thermal stress damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

An organic layer is introduced as an intermediary between the substrate and the electrostatic chuck. This organic layer has a low friction coefficient that reduces friction damage during substrate positioning and movement. The organic layer also acts as a thermal barrier that reduces thermal stress damage from the heated electrostatic chuck during plasma processing, while still allowing electrostatic attraction to hold the substrate firmly.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If plasma processing is performed on the substrate, then the substrate can be processed effectively, but thermal stress and friction cause damage to both the substrate and substrate support

Engineering Contradiction:
Improvesubstrate processing efficiencyVSAvoidparticle generation from damage
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The organic layer serves as a protective intermediary during plasma processing. It reduces the direct thermal contact between the heated electrostatic chuck and the substrate, minimizing thermal stress damage. It also reduces friction during substrate handling, preventing mechanical damage. This allows effective plasma processing to continue while significantly reducing particle generation from damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Temperature

If the substrate is in direct contact with the electrostatic chuck, then cooling efficiency can be maintained, but friction and thermal stress increase damage and particle generation

Engineering Contradiction:
Improvecooling efficiencyVSAvoidfriction and thermal stress
Core Design Contradiction:
TemperatureVSObject-affected harmful factors

Solution Approach 1:

The organic layer acts as a thermal mediator that allows controlled heat transfer. It provides enough thermal contact to maintain cooling efficiency by allowing heat to conduct from the substrate to the electrostatic chuck, while simultaneously providing enough isolation to reduce thermal stress damage. The low friction coefficient also reduces mechanical damage during positioning.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses damage to substrates and substrate supports, reducing particle generation and maintaining cooling efficiency during plasma processing.

Implementation Method 1

operating the electrostatic chuck to hold the substrate by electrostatic attraction

Methodology Applied
Scientific EffectElectrostatic attraction: Electrostatics

Data Source

PatentUS20250308864A1Substrate processing method, substrate processing apparatus, and substrate processing system
Publication Date: 2025.10.02 TOKYO ELECTRON LTD
  • US20250308864A1 patent drawing
  • US20250308864A1 patent drawing
  • US20250308864A1 patent drawing

AI summary

A disclosed substrate processing method includes placing a substrate on an electrostatic chuck of a substrate support of a substrate processing apparatus. The electrostatic chuck includes a substrate support surface. The substrate includes a back surface and an organic layer formed in advance on the back surface. The substrate is placed on the electrostatic chuck so that the organic layer is in contact with the substrate support surface. The substrate processing method further includes operating the electrostatic chuck to hold the substrate by electrostatic attraction. The substrate processing method further includes processing the substrate in the substrate processing apparatus.