Electrostatic Chuck Power Rod Materials for High-Temperature Uniformity

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Solution Overview

Problem

Conventional substrate supports in semiconductor manufacturing face challenges such as material oxidation, increased resistance, hot spot generation, and structural integrity issues due to high processing temperatures and the use of materials like nickel.

Innovation Solution

The development of substrate support assemblies that incorporate a power transmission rod made from refractory metals or alloys, such as tantalum or tungsten-copper, with specific thermal expansion coefficients and resistivity characteristics, along with an embedded heater and electrode within an electrostatic chuck body.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional materials like nickel are used in substrate support assemblies, then ease of manufacture is improved, but reliability deteriorates due to material oxidation and increased resistance at high temperatures

Engineering Contradiction:
Improveease of manufactureVSAvoidreliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies composite materials by using refractory metals (tantalum, tungsten) and their alloys (tungsten-copper) in the power transmission rod and electrode components. These materials provide both high-temperature reliability and acceptable manufacturability through established metallurgical processes like brazing and sintering.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent changes the material parameters by selecting refractory metals with specific properties: low coefficient of thermal expansion (less than 10×10^-6/°C) and low resistivity (less than 15×10^-8 Ω-m). This parameter optimization ensures reliability at high temperatures while maintaining manufacturability.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If conventional materials are used in substrate support assemblies, then device complexity is reduced, but object-generated harmful factors increase due to hot spot generation and oxidation

Engineering Contradiction:
Improvedevice complexityVSAvoidhot spot generation
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

The patent uses composite materials (refractory metals and their alloys) that inherently resist hot spot generation due to their superior thermal and electrical conductivity properties, thereby reducing harmful thermal effects without significantly increasing device complexity.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent employs materials that are resistant to oxidation and degradation at high temperatures, effectively creating components that maintain their performance over extended periods rather than degrading quickly, thus reducing the need for frequent replacement.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Ease of manufacture

If conventional materials are used in substrate support assemblies, then ease of manufacture is improved, but structural integrity deteriorates at high temperatures

Engineering Contradiction:
Improveease of manufactureVSAvoidstructural integrity
Core Design Contradiction:
Ease of manufactureVSStrength

Solution Approach 1:

The patent employs composite materials (refractory metals and alloys) that maintain structural integrity at high temperatures. These materials are joined using specialized brazing techniques that preserve strength while remaining manufacturable through established industrial processes.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent selects materials with specific parameter ranges: refractory metals with melting points above 2000°C and controlled coefficients of thermal expansion. These parameter changes ensure structural integrity at high temperatures while allowing for manufacturability through controlled processing parameters.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These assemblies provide improved structural integrity and process uniformity at high temperatures, reducing hot spot generation and maintaining sustainable substrate support during high-temperature operations.

Implementation Method 1

Internally located heating devices may generate heat within the support, and the heat may be transferred conductively to the substrate

Methodology Applied
Scientific EffectConductive heat transfer: Conduction (thermal)

Implementation Method 2

The power transmission rod may be characterized by a room temperature resistivity of less than or about 15×10−8 Ω-m

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10−6/° C

Methodology Applied
Scientific EffectThermal expansion resistance: Thermal Expansion

Data Source

PatentUS12300474B2Semiconductor substrate support power transmission components
Publication Date: 2025.05.13 APPLIED MATERIALS INC
  • US12300474B2 patent drawing
  • US12300474B2 patent drawing
  • US12300474B2 patent drawing

AI summary

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10−6/° C.