Electrostatic Chuck Protrusion Layout for Wafer Temperature Uniformity

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Solution Overview

Problem

Existing electrostatic chucks face issues with wafer temperature fluctuations and insufficient cooling due to the protrusion of the dielectric substrate, leading to potential exposure of the joining layer to plasma and increased thermal resistance.

Innovation Solution

The dielectric substrate is configured to protrude outward with an attraction electrode embedded in the protrusion section, enhancing the attraction force and reducing thermal resistance, while a coolant flow path is optimized to improve cooling efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If the outer circumferential edge of the dielectric substrate protrudes outward from the surface to be joined of the base plate, then the joining layer is protected from plasma exposure, but the cooling of the protrusion section becomes insufficient

Engineering Contradiction:
Improveplasma exposure to joining layerVSAvoidcooling of protrusion section
Core Design Contradiction:
Object-affected harmful factorsVSTemperature

Solution Approach 1:

The invention extends the attraction electrode into the protrusion section of the dielectric substrate, utilizing the third dimension (depth) to solve the cooling problem. By placing the electrode in the protrusion section, it creates a thermal conduction path from the wafer to the base plate through the dielectric substrate, enabling heat dissipation from areas that would otherwise be poorly cooled.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Object-affected harmful factors

If the outer circumferential edge of the dielectric substrate protrudes outward from the surface to be joined of the base plate, then the joining layer is protected from plasma exposure, but the thermal resistance between the protrusion section and wafer increases

Engineering Contradiction:
Improveplasma exposure to joining layerVSAvoidthermal resistance
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The attraction electrode is positioned in the protrusion section, utilizing the vertical dimension to establish a thermal conduction pathway. This allows heat to flow from the wafer contact area through the dielectric substrate to the base plate, reducing thermal resistance in the protrusion region.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The dielectric substrate acts as an intermediary thermal conduction medium between the wafer and the base plate. The attraction electrode embedded in the protrusion section facilitates heat transfer through this intermediary material, solving the thermal resistance problem while maintaining the protective protrusion structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Force

If the attraction electrode is provided inside the dielectric substrate, then the electrostatic attraction is generated, but the joining layer end may be exposed to plasma and deteriorate

Engineering Contradiction:
Improveelectrostatic attractionVSAvoidplasma exposure to joining layer
Core Design Contradiction:
ForceVSObject-affected harmful factors

Solution Approach 1:

The dielectric substrate is segmented into different functional zones: the main body contains the attraction electrode for electrostatic attraction, while the protruding portion extends beyond the base plate to protect the joining layer. This segmentation allows each zone to fulfill its specific function independently.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dielectric substrate extends in the radial dimension beyond the base plate surface, creating a protective overhang. This dimensional extension allows the substrate to serve dual purposes: maintaining electrostatic attraction functionality while physically shielding the joining layer from plasma exposure.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces wafer temperature fluctuations and ensures uniform in-plane temperature distribution by increasing the attraction force and improving cooling performance, thereby protecting the wafer from plasma exposure.

Implementation Method 1

When a voltage is applied to the attraction electrode, an electrostatic force is generated, and the wafer placed on the dielectric substrate is attracted and held

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Implementation Method 2

Since a part of the attraction electrode is provided in the protrusion section, an attraction force of the protrusion section to the wafer increases, and those components are tightly attached to each other with a strong force. According to this, since a thermal resistance between the protrusion section and the wafer is reduced, a temperature increase of the wafer immediately above the protrusion section can be reduced

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250242460A1Electrostatic chuck
Publication Date: 2025.07.31 TOTO LTD
  • US20250242460A1 patent drawing
  • US20250242460A1 patent drawing
  • US20250242460A1 patent drawing

AI summary

An electrostatic chuck includes a dielectric substrate, an attraction electrode provided inside the dielectric substrate, and a base plate joined to the dielectric substrate. In top view, the dielectric substrate includes a protrusion section which protrudes outward from a surface to be joined of the base plate, and a part of the attraction electrode is provided in the protrusion section.