Electrostatic Chuck Coating for Plasma Processing
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Solution Overview
Problem
In plasma processing apparatuses, residual adsorptive forces from reaction products containing C and F on electrostatic chucks hinder the separation of workpieces, leading to potential damage and inefficiencies in the processing and cleaning cycles.
Innovation Solution
Attaching Si-containing or N-containing materials to the electrostatic chuck before processing, using plasma to sputter and deposit these materials onto the chuck, thereby blocking residual adsorptive forces and facilitating smoother workpiece separation and cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cleaning processing is performed by plasma of O2-containing gas to remove attached matter containing C and F, then the processing container is cleaned, but residual adsorptive forces remain on the electrostatic chuck that hinder workpiece separation
Solution Approach 1:
The patent applies preliminary action by attaching Si-containing or N-containing materials to the electrostatic chuck before workpiece processing. This pre-attachment creates a barrier layer that prevents reaction products from directly contacting the chuck surface, thereby eliminating residual adsorptive forces that would otherwise hinder subsequent workpiece separation while maintaining cleaning effectiveness.
Solution Approach 2:
The patent uses Si-containing or N-containing materials as intermediary substances between the electrostatic chuck and the reaction products. These intermediary materials block the direct interaction between the chuck and carbon-fluorine containing residues, preventing adsorptive force generation while allowing the cleaning plasma to effectively remove attached matter.
2Productivity
If workpiece is processed with plasma, then the workpiece is treated, but reaction products containing C and F are generated and attach to the electrostatic chuck
Solution Approach 1:
The patent converts the harmful effect of reaction product accumulation into a beneficial outcome by using Si-containing or N-containing materials as protective layers. These layers are specifically designed to be resistant to carbon-fluorine containing reaction products, transforming the potential contamination problem into an opportunity for creating a stable, non-adsorptive surface that maintains processing throughput while eliminating residual forces.
3Ease of operation
If Si-containing or N-containing material is attached to the electrostatic chuck, then residual adsorptive forces are blocked, but additional processing steps are required
Solution Approach 1:
The patent merges the attachment of Si-containing or N-containing materials with the existing cleaning processing sequence. By integrating the material attachment step into the regular maintenance routine between workpiece lots, the patent adds minimal complexity while achieving continuous elimination of residual adsorptive forces, thereby simplifying overall operation through systematic integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces residual adsorptive forces, improving workpiece separation and processing efficiency by covering the reaction products with Si or N-containing materials, preventing reattachment and ensuring smooth operation without damaging the workpieces.
Implementation Method 1
a voltage is applied to an electrostatic chuck 20, thereby a wafer W is adsorbed
Implementation Method 2
the wafer W is processed with plasma of processing gas
Implementation Method 3
removes the attached matter in the processing container by plasma of O2-containing gas
Implementation Method 4
attaching a Si-containing material or a N-containing material to an electrostatic chuck
Data Source
AI summary
A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.