Electrostatic Chuck Bonding Layer for Through-Hole Thermal Stress
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Solution Overview
Problem
Existing electrostatic chucks face challenges in reducing thermal stress on dielectric substrates due to temperature changes, particularly at through-holes used for cooling gas supply, where thermal stress is exacerbated by the distance of through-holes from the substrate's central axis.
Innovation Solution
The electrostatic chuck is designed with a bonding layer that optimizes its Young's modulus based on the distance of through-holes from the dielectric substrate's central axis, adhering to the condition E≤0.2063×X²−59.3887×X+4278.8065, where E is the Young's modulus and X is the distance in millimeters, thereby reducing thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If the Young's modulus of the bonding layer is reduced to minimize thermal stress, then thermal stress on the dielectric substrate is reduced, but heat transfer performance deteriorates
Solution Approach 1:
The patent applies parameter changes by establishing a quadratic relationship between the Young's modulus of the bonding layer and the distance of through-holes from the central axis. The formula E≤0.2063×X²−59.3887×X+4278.8065 dynamically adjusts the optimal Young's modulus based on through-hole position, allowing the bonding layer to minimize thermal stress while maintaining adequate heat transfer performance for each specific configuration
Solution Approach 2:
The patent applies local quality by recognizing that different regions of the dielectric substrate experience different thermal stress levels. Through-holes at different distances from the central axis require different bonding layer properties. The solution tailors the Young's modulus selection locally based on the specific position of each through-hole, optimizing performance for each region rather than using a uniform approach
2Productivity
If the distance between the central axis of the dielectric substrate and the central axis of the through-hole increases, then cooling gas supply effectiveness is improved, but thermal stress at the through-hole increases
Solution Approach 1:
The patent addresses this contradiction by establishing that the allowable Young's modulus of the bonding layer is a function of the through-hole distance X. As X increases to improve cooling effectiveness, the formula dynamically adjusts the required Young's modulus to compensate for the increased thermal stress, maintaining structural integrity while preserving cooling performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces thermal stress on the dielectric substrate while maintaining the required heat transfer performance, preventing damage to the substrate.
Implementation Method 1
Due to a temperature change of each part following processing of the substrate, a temperature difference between the dielectric substrate and the base plate, and the like, a great thermal stress is applied to the dielectric substrate
Implementation Method 2
If a material with the smallest possible Young's modulus is used as the material of the bonding layer, the thermal stress applied to the dielectric substrate can be reduced to be small
Implementation Method 3
When a voltage is applied to the chucking electrode, an electrostatic force is generated, and a substrate placed on the dielectric substrate can be attracted and held
Implementation Method 4
the base plate is supplied with a low temperature refrigerant, and therefore, the temperature of the base plate may be lowered
Data Source
AI summary
An electrostatic chuck 10 includes a dielectric substrate 100 in which through-holes 140 are formed, a base plate 200 formed of a metal material, and a bonding layer 300 that bonds the dielectric substrate 100 and the base plate 200. When a Young's modulus of the bonding layer 300 is E (MPa), and a distance between a central axis AX0 of the dielectric substrate 100 and a central axis AX1 of each of the through-holes 140 is X (mm), with respect to the through-holes 140 at a position farthest from the central axis AX0, E≤0.2063×X2−59.3887×X+4278.8065 is established.