Electrostatic Chuck Electrode Layout for Uniform RF Wafer Processing
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Solution Overview
Problem
Inconsistent RF power distribution due to capacitance variations in the multi-layer structure of electrostatic chucks affects the consistency of semiconductor processing results.
Innovation Solution
An electrostatic chuck with an insulation layer and an electrode assembly connected to both DC and RF power supplies, ensuring uniform RF power distribution across the insulation layer by using distribution electrodes to maintain consistent RF signal paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a multi-layer structure with adhesive layers is used to bond the ceramic layer, heating layer, and base layer, then the electrostatic chuck can be assembled, but the adhesive layer thickness varies at different positions causing capacitance variations and non-uniform RF power distribution
Solution Approach 1:
The patent extracts and removes the adhesive layers from the multi-layer structure, bonding the ceramic layer, heating layer, and base layer directly without any adhesive. This eliminates the source of thickness variation and capacitance non-uniformity while maintaining the structural integrity and assembly feasibility of the electrostatic chuck.
2Ease of manufacture
If the RF power supply is electrically connected to the base layer through electrical cables or copper pillars, then RF energy can be fed through the base layer, but the capacitance differences in the multi-layer structure cause non-uniform RF power distribution to the wafer
Solution Approach 1:
The patent removes the problematic multi-layer adhesive structure that causes capacitance variations, thereby eliminating the root cause of non-uniform RF power distribution. The RF power connection through the base layer is maintained, but the uniformity issue is resolved by eliminating the variable adhesive layer thickness.
3Ease of manufacture
If different layers are bonded through adhesive with inconsistent thickness, then the multi-layer structure can be assembled, but the capacitance between base layer and wafer varies at different positions affecting processing consistency
Solution Approach 1:
The patent extracts and eliminates the adhesive layers from the bonding process, directly bonding the ceramic layer, heating layer, and base layer together. This removal of the variable adhesive thickness eliminates the source of capacitance variation, thereby improving wafer processing consistency while maintaining structural assembly capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the consistency of wafer processing results and increases yield by ensuring uniform RF power distribution, thereby addressing the inconsistency caused by capacitance differences in the multi-layer structure.
Implementation Method 1
When the DC power supply applies DC power to the electrode assembly, the electrode assembly is used to adsorb the wafer on the insulation layer
Implementation Method 2
When the RF power supply applies RF power to the electrode assembly, the RF power is uniformly distributed to different positions of the insulation layer
Data Source
AI summary
An electrostatic chuck arranged in a process chamber of a semiconductor processing apparatus includes an insulation layer for carrying a wafer and an electrode assembly arranged in the insulation layer. The electrode assembly is electrically connected to a direct current (DC) power supply and a radio frequency (RF) power supply. When the DC power supply applies DC power to the electrode assembly, the electrode assembly is used to adsorb the wafer on the insulation layer. When the RF power supply applies RF power to the electrode assembly, the RF power is uniformly distributed to different positions of the insulation layer.