Electrostatic Chuck Voltage Control for High-Temperature Wafer Release

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Solution Overview

Problem

Conventional electrostatic chucks face challenges in stably attracting and detaching substrates at high temperatures due to changes in volume resistivity, leading to unstable polarization and residual charges, which are exacerbated at temperatures above 200°C.

Innovation Solution

The electrostatic chuck is designed with independently controllable temperature regions and electrodes, allowing for adjustable attraction voltages and alternating-current voltages to maintain consistent charge transfer and prevent residual attraction, even at high temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the electrostatic chuck is controlled to a high temperature, then the substrate processing capability is improved, but the volume resistivity changes leading to unstable polarization and residual charges

Engineering Contradiction:
Improveelectrostatic chuck temperatureVSAvoidsubstrate attraction stability
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent applies dynamics by making the attraction voltage adjustable and controllable based on temperature conditions. The system dynamically adapts the attraction voltage magnitude according to the electrostatic chuck temperature to maintain stable substrate attraction despite temperature-induced changes in volume resistivity. This resolves the contradiction by allowing the system to operate reliably across a range of temperatures through active control adjustment.

Inventive Principle:
Principle #15Dynamics

2Reliability

If the attraction voltage is increased to maintain stable attraction at high temperature, then the substrate attraction stability is improved, but the residual charges and unstable polarization are exacerbated

Engineering Contradiction:
Improvesubstrate attraction stabilityVSAvoidresidual charges
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies parameter changes by adjusting the magnitude of the attraction voltage based on the electrostatic chuck temperature and the resulting volume resistivity changes. Rather than using a fixed high voltage that would exacerbate residual charges, the system optimizes the voltage magnitude to maintain stable attraction while minimizing harmful effects. This resolves the contradiction by finding an optimal voltage parameter that balances attraction stability with residual charge control.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design ensures stable attraction and detachment of substrates at high temperatures by controlling charge transfer and minimizing residual attraction, enhancing processing reliability.

Implementation Method 1

a dielectric and an attracting electrode for attracting the substrate inside of the dielectric

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Implementation Method 2

a heater electrode for heating the substrate; a heating power source for applying a heater voltage for heating the substrate to the heater electrode

Methodology Applied
Scientific EffectResistive heating: Joule Heating

Data Source

PatentUS12451336B2Substrate processing apparatus and substrate processing method
Publication Date: 2025.10.21 TOKYO ELECTRON LTD
  • US12451336B2 patent drawing
  • US12451336B2 patent drawing
  • US12451336B2 patent drawing

AI summary

There are provided an electrostatic chuck that attracts a substrate, and includes a dielectric and an attracting electrode for attracting the substrate inside of the dielectric, a heater electrode for heating the substrate, an attracting power source for applying an attraction voltage for attracting the substrate to the attracting electrode, and a heating power source for applying a heater voltage for heating the substrate to the heater electrode, wherein the attracting power source controls a magnitude of the attraction voltage that is applied to the attracting electrode based on a magnitude of the heater voltage.