Electrostatic Chuck Protrusion Layout for Wafer Temperature Control
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Solution Overview
Problem
Existing substrate treatment apparatuses face challenges in easily controlling the temperature of wafers during semiconductor manufacturing processes, particularly in maintaining precise temperature changes and rates, which affects the formation of high aspect ratio patterns and integration of semiconductor devices.
Innovation Solution
The substrate treatment apparatus incorporates an electrostatic chuck with a dielectric layer featuring protrusions and a through hole for cooling gas supply, controlled by a unit that adjusts the pressure of the cooling gas to manage thermal variables and rates, optimizing the substrate treatment process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional electrostatic chuck with a flat insulating layer is used, then the structure is simple, but the temperature control precision and rate control of the wafer are poor
Solution Approach 1:
The insulating layer is segmented into a flat lower insulating layer and multiple protruding upper insulating layers. This segmentation creates different thermal contact areas with the wafer, enabling precise control of temperature and temperature change rates while maintaining effective electrostatic adsorption.
Solution Approach 2:
Different regions of the insulating layer are given different heights to create local quality variations. The protruding upper insulating layers provide localized thermal isolation, allowing independent control of temperature parameters during different process stages.
2Manufacturing precision
If the cooling gas pressure is kept constant, then the system operation is simple, but the temperature change rate control is insufficient
Solution Approach 1:
The cooling gas pressure is changed dynamically during the semiconductor manufacturing process. By adjusting pressure at different stages, the system achieves precise control over temperature and temperature change rates, enabling both heating and cooling phases with controlled rates.
Solution Approach 2:
The cooling gas pressure is periodically adjusted according to process requirements. Pressure increases during cooling phases and decreases during heating phases, creating a periodic control pattern that enables precise temperature profile management.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables precise control of wafer temperature changes and rates, reducing defects in etching profiles and enhancing the formation of high aspect ratio patterns, thereby improving the integration and reliability of semiconductor devices.
Implementation Method 1
The electrostatic chuck, which is one of the electrical chucks, has the advantage of being simple and having strong adsorption power because the substrate can be fixed to the stage using electrostatic force.
Implementation Method 2
a through hole penetrating at least a part of each of the base and the insulating layer, the through hole being configured to supply a cooling gas onto the insulating layer
Data Source
AI summary
A substrate treatment device includes an electrostatic chuck, wherein the electrostatic chuck includes a base, an insulating layer arranged on the base, and a through hole penetrating at least a part of each of the base and the insulating layer, the through hole being configured to supply a cooling gas onto the insulating layer, and the insulating layer includes a lower insulation layer, and a plurality of protrusions placed on the lower insulation layer, spaced apart from each other in a horizontal direction, and configured to support a wafer, and at least one of a temperature change of the wafer and a rate of temperature change of the wafer is set by setting a dimension of each of the plurality of protrusions.