Electrostatic Filter Reducing Particle Generation in Ion Implantation
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Solution Overview
Problem
Ion implantation systems face frequent maintenance due to material accumulation and particulate contamination from residues on beamline components, leading to decreased throughput and increased manufacturing costs.
Innovation Solution
An electrostatic filter with a specific configuration of conductive beam optics, including terminal, suppression, and ground electrodes, is used to control the ion beam and reduce particle generation by shielding electrodes from back-sputter material, thereby minimizing contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If beamline components are operated continuously, then productivity is improved, but material accumulation and particulate contamination increase
Solution Approach 1:
The patent extracts the harmful function of beamline components by introducing an electrostatic filter that removes back-sputter material and residues from the ion beam path. The filter captures particulate contamination generated during continuous operation, allowing the beamline components to operate continuously without accumulating harmful deposits that would otherwise require maintenance.
Solution Approach 2:
The electrostatic filter acts as an intermediary between the ion source and the substrate. It intercepts and removes back-sputter material and residues before they can deposit on downstream beamline components, thereby enabling continuous operation while preventing contamination accumulation.
2Reliability
If beamline components are replaced or cleaned frequently, then reliability is improved, but productivity deteriorates
Solution Approach 1:
The electrostatic filter enables beamline components to maintain their own cleanliness during continuous operation. By continuously removing back-sputter material and residues, the filter allows the beamline components to operate without external intervention for maintenance, thereby improving reliability while maintaining high productivity.
3Object-generated harmful factors
If maintenance processes are performed, then object-generated harmful factors are reduced, but loss of time increases
Solution Approach 1:
The electrostatic filter enables continuous removal of back-sputter material and residues during ion beam operation. This continuous cleaning action prevents material accumulation without requiring the system to shut down for maintenance, thereby eliminating maintenance time loss while keeping harmful factors reduced.
4Object-generated harmful factors
If electrostatic filter is used, then object-generated harmful factors are reduced, but device complexity increases
Solution Approach 1:
The electrostatic filter performs multiple functions within a single device: it removes back-sputter material, captures particulate contamination, and protects downstream beamline components. This multi-functionality reduces the need for multiple separate maintenance and cleaning systems, thereby limiting the increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The electrostatic filter effectively reduces particle contamination on the ion implantation system, decreasing the need for frequent maintenance and enhancing manufacturing efficiency by maintaining a cleaner environment for the ion beam.
Implementation Method 1
an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target
Implementation Method 2
the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline
Implementation Method 3
wherein the first ground electrode is grounded and positioned adjacent the exit... wherein the second ground electrode is grounded and positioned adjacent the exit
Data Source
AI summary
Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.