Electrostatic Holding Apparatus Adhesive Bonding for Wafer Planarity
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Solution Overview
Problem
Conventional electrostatic holding apparatuses for silicon wafers suffer from form deviations in the support surface due to anodic bonding, leading to planarity issues that complicate semiconductor processing, requiring elaborate processes to correct and extending production duration.
Innovation Solution
A method involving adhesive bonding between a plate-type holding element and a core element, using a forming tool to align the support surface with a predetermined master surface, creating an adhesive connecting layer that compensates for form deviations, ensuring the support surface's exactness and stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If anodic bonding is used to connect the holding element to the core element, then mechanical and thermal stability is improved, but form deviations occur in the support surface
Solution Approach 1:
An adhesive layer is introduced as an intermediary between the holding element and core element. This adhesive layer serves as a mediator that absorbs form deviations from both components while maintaining the mechanical and thermal stability provided by anodic bonding. The adhesive compensates for surface irregularities without transmitting them to the support surface.
Solution Approach 2:
The bonding method is changed from direct anodic bonding to adhesive bonding with controlled layer thickness. By changing the bonding parameter from rigid direct connection to flexible adhesive layer with specific thickness range (1-100 micrometers), the system achieves both stability and form precision.
2Manufacturing precision
If elaborate processes for setting planarity are applied, then form exactness of the support surface is improved, but production duration increases
Solution Approach 1:
The adhesive layer is applied in advance during the bonding process itself, before final assembly. This preliminary application of the adhesive with controlled thickness eliminates the need for subsequent elaborate planarity correction processes, thereby maintaining high form exactness while reducing production duration.
3Force
If the holding element is made as thin as possible, then electrostatic holding force is improved, but mechanical stability deteriorates
Solution Approach 1:
The holding element is constructed as a composite structure combining a thin electrostatically active layer with a mechanically stable support structure. The adhesive bonding to the core element provides additional mechanical reinforcement, allowing the holding element to remain thin for optimal electrostatic performance while maintaining sufficient mechanical stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies production, maintains high form exactness of the support surface, and enhances the durability of the holding apparatus by using an adhesive connecting layer with high dimensional stability, reducing the need for elaborate correction processes and shortening production time.
Implementation Method 1
a first holding element (11, 12), which has a first electrode device (20) and which spans a support surface (11a) for receiving a component (1), and a core element (13) are connected to one another by adhesive bonding
Implementation Method 2
The support surface (11a) of the first holding element (11, 12) and the master surface are in positive contact
Implementation Method 3
the adhesive connecting layer (15) compensates for form deviations between surfaces (11u, 13u) which face one another
Data Source
AI summary
Production of a holding apparatus (100) for electrostatically holding a component, e.g., silicon wafer (1), includes connecting plate-type first holding element (11, 12) and plate-type core element (13), first holding element (11, 12) having first electrode device (20) and spanning support surface for receiving component (1), and the connecting includes the steps: providing liquid adhesive to at least one of the mutually facing surfaces of first holding element (11, 12) and core element (13), aligning first holding element (11, 12) with first forming tool (40) such that support surface is matched to predetermined master surface (41) of first forming tool (40), and curing the adhesive, wherein first adhesive connecting layer (15) is formed, which has thickness variations constituted by form deviations between support surface and at least one of the mutually facing surfaces. Also described is a holding apparatus (100) configured to electrostatically hold a component, e.g., silicon wafer (1).