Electrostatic Shield Layout for Plasma Vessel Sputtering Suppression
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Solution Overview
Problem
Sputtering on the inner peripheral surface of a process vessel occurs during plasma excitation of a process gas, leading to contamination of the substrate processing environment.
Innovation Solution
A substrate processing apparatus with a coil wound around the outer peripheral surface of the process vessel and an electrostatic shield between the coil and the vessel, featuring partitions and openings to minimize electric field interaction with the vessel surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a coil is wound around the outer peripheral surface of the process vessel to excite plasma, then plasma generation efficiency is improved, but sputtering on the inner peripheral surface of the process vessel occurs causing contamination
Solution Approach 1:
An electrostatic shield is introduced as an intermediary component between the coil and the process vessel. The shield includes a partition extending in the circumferential direction that blocks electric field lines from directly reaching the inner peripheral surface of the process vessel, thereby preventing ion acceleration and sputtering while allowing the coil to continue generating plasma effectively
Solution Approach 2:
The electrostatic shield is segmented into multiple partitions extending in the circumferential direction, creating multiple isolated regions between the coil and process vessel. This segmentation effectively blocks electric field penetration at multiple points around the circumference, providing comprehensive protection against sputtering while maintaining plasma generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Suppresses sputtering on the inner peripheral surface, maintaining a clean processing environment and preventing material contamination of the substrate.
Implementation Method 1
a high frequency power is supplied to the coil
Implementation Method 2
an electrostatic shield disposed between the outer peripheral surface of the process vessel and the coil
Implementation Method 3
the electrostatic shield includes a partition extending in a circumferential direction of the coil and configured to partition between a part of the coil and the outer peripheral surface of the process vessel
Data Source
AI summary
Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber where a process gas is excited into plasma; a gas supplier supplying the process gas into the process chamber; a coil wound around an outer peripheral surface of the process vessel and spaced apart therefrom, wherein a high frequency power is supplied to the coil; and an electrostatic shield disposed between the outer peripheral surface and the coil, wherein the electrostatic shield includes: a partition extending in a circumferential direction to partition between a part of the coil and the outer peripheral surface; and an opening extending in the circumferential direction and opened between another part of the coil and the outer peripheral surface.