Electrostatically Charged Substrate for Carbon Nanotube Alignment

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Solution Overview

Problem

Current methods for fabricating carbon nanotubes face challenges in achieving lengths greater than a few centimeters due to difficulties in maintaining uniform magnetic fields and weak interactions between carbon nanotubes and magnetic fields, leading to misalignment and shorter nanotube growth.

Innovation Solution

The use of an electrostatically charged substrate and components, where the carbon nanotubes act as antennae to emit an electromagnetic field, creating an electrostatic field that repels neighboring nanotubes and maintains vertical alignment, combined with chemical vapor deposition and Plasma Enhanced CVD systems, to grow carbon nanotubes up to a meter in length with uniform electrical properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If magnetic fields are used to align carbon nanotubes during fabrication, then nanotube alignment is improved, but the interaction strength between nanotubes and magnetic fields is weak, limiting growth length

Engineering Contradiction:
Improvenanotube alignmentVSAvoidinteraction strength
Core Design Contradiction:
Stability of the object's compositionVSForce

Solution Approach 1:

The patent replaces magnetic field-based alignment with an electrostatic field-based alignment system. Conductive elements applied to the substrate generate electrostatic fields that interact strongly with the carbon nanotubes during growth, providing effective alignment without relying on weak magnetic field interactions. This substitution of the physical field type (from magnetic to electrostatic) resolves the contradiction by achieving both strong interaction and stable alignment.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Ease of manufacture

If conventional fabrication methods are used, then manufacturing simplicity is maintained, but nanotube growth length is limited to a few centimeters

Engineering Contradiction:
Improvefabrication simplicityVSAvoidnanotube length
Core Design Contradiction:
Ease of manufactureVSLength of moving object

Solution Approach 1:

The patent segments the substrate into multiple regions, each with conductive elements configured to generate specific electrostatic field patterns. This segmentation allows different zones to support nanotube growth under optimized conditions, enabling extended growth lengths while maintaining a relatively simple overall fabrication process. The segmented approach to field generation resolves the contradiction between manufacturing simplicity and achieving long nanotube growth.

Inventive Principle:
Principle #1Segmentation

3Stability of the object's composition

If electrostatic fields are applied to align nanotubes, then nanotube alignment and length are improved, but process complexity increases

Engineering Contradiction:
Improvenanotube alignmentVSAvoidprocess complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The conductive elements are integrated directly into the substrate structure, allowing the substrate itself to generate the electrostatic fields needed for nanotube alignment. This self-service approach eliminates the need for separate, complex external field generation systems. The substrate performs dual functions: supporting nanotube growth and generating alignment fields, thereby reducing overall process complexity while maintaining effective nanotube alignment and extended growth lengths.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method produces significantly longer and straighter carbon nanotubes with uniform electrical properties, overcoming previous limitations and enabling longer, more aligned nanotube growth.

Implementation Method 1

The wafer includes a circuitry configured to conduct at least one static charge. The wafer also includes a top surface having a plurality of CNT seed sites, each seed site coupled to the circuitry and configured to receive one of the at least one static charge.

Methodology Applied
Scientific EffectElectrostatic field: Electric Field

Implementation Method 2

the carbon nanotubes act as antennae to emit an electromagnetic field, creating an electrostatic field that repels neighboring nanotubes and maintains vertical alignment

Methodology Applied
Scientific EffectElectrostatic repulsion: Ion Repulsion/Attraction

Implementation Method 3

the carbon nanotubes act as antennae to emit an electromagnetic field

Methodology Applied
Scientific EffectElectromagnetic field emission: Electromagnetic Induction

Implementation Method 4

combined with chemical vapor deposition and Plasma Enhanced CVD systems, to grow carbon nanotubes up to a meter in length

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 5

combined with chemical vapor deposition and Plasma Enhanced CVD systems, to grow carbon nanotubes up to a meter in length

Methodology Applied
Scientific EffectPlasma enhanced chemical vapor deposition: Plasma Enhanced Chemical Vapour Deposition

Data Source

PatentUS8887663B2Method and apparatus for fabrication of carbon nanotubes using an electrostatically charged substrate and liner
Publication Date: 2014.11.18 SAMSUNG AUSTIN SEMICON LLC
  • US8887663B2 patent drawing
  • US8887663B2 patent drawing
  • US8887663B2 patent drawing

AI summary

A system for use in fabrication of carbon nanotubes (CNTs) includes a wafer having a circuitry and a plurality of CNT seed sites. The system also includes a base assembly configured to support the wafer. The system further includes a first tube disposed over the wafer and configured to surround the CNTs that form on the seed sites. The circuitry in the wafer is configured to conduct at least one static charge. The wafer includes a top surface having a plurality of CNT seed sites, each seed site coupled to the circuitry and configured to receive one of the at least one static charge.