Electrostatic Transfer Head for Semiconductor Light Emitting Devices
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Solution Overview
Problem
Current semiconductor light emitting devices face inefficiencies and low reliability in the transfer process, particularly due to slow response times and poor yield in flexible display applications, which limits their adoption in modern display technologies.
Innovation Solution
A method and device for transferring semiconductor light emitting devices using a transfer head with an electrostatic force generated by electrifying the undoped semiconductor layer, featuring a base substrate with a protrusion and a head electrode, allowing for a higher grip force and improved reliability during the transfer process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional transfer methods are used for semiconductor light emitting devices, then the transfer process is simple, but the transfer efficiency is low and reliability is poor
Solution Approach 1:
The patent replaces conventional mechanical transfer methods with an electrostatic transfer system. The transfer head generates electrostatic force by applying voltage to the head electrode, which attracts the semiconductor light emitting device through the undoped semiconductor layer, enabling reliable and efficient transfer without mechanical contact
Solution Approach 2:
The patent utilizes changes in electrostatic parameters (voltage application) to control the transfer process. By applying voltage to the head electrode, the electrostatic force is generated and controlled, allowing precise control over the attachment and release of the semiconductor device during transfer
2Force
If the second conductive electrode is formed only on the surface of the second conductive semiconductor layer, then the manufacturing process is simple, but the grip force during transfer is insufficient
Solution Approach 1:
The patent extends the second conductive electrode from a two-dimensional surface configuration into the third dimension by having it protrude from the side surface of the undoped semiconductor layer. This vertical extension increases the electrode's surface area and enhances the electrostatic grip force during transfer
Solution Approach 2:
The second conductive electrode is pre-configured to extend from the surface to the side surface of the undoped semiconductor layer before the transfer process. This preliminary structural arrangement ensures that when voltage is applied, maximum electrostatic force is generated for reliable gripping
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the transfer efficiency and reliability of semiconductor light emitting devices, enabling their effective integration into flexible display technologies with improved performance and yield.
Implementation Method 1
applying a voltage to the head electrode such that an attachment force is provided to the undoped semiconductor layer by an electrostatic force
Data Source
AI summary
A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate.