Element Chip Dicing with Two-Step Laser Grooving
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Solution Overview
Problem
Existing element chip manufacturing methods using plasma etching can result in uneven edges during laser beam irradiation, leading to reduced smoothness and die strength of the element chips.
Innovation Solution
The method involves a two-step laser grooving process, where a first laser beam with a longer pulse width is used to remove the resin layer, and a second laser beam with a shorter pulse width is used to remove the wiring layer, exposing the semiconductor layer, and the irradiation is performed multiple times along the dicing region to minimize shock waves.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a single laser beam irradiation step is used to remove both resin layer and wiring layer, then the manufacturing process is simple and fast, but uneven edges occur at the opening and side surface smoothness deteriorates
Solution Approach 1:
The laser grooving step is divided into two distinct steps: a first step that irradiates a first laser beam to remove the resin layer, and a second step that irradiates a second laser beam to remove the wiring layer. This segmentation allows each step to be optimized for its specific material, preventing uneven edges and maintaining side surface smoothness while still achieving efficient manufacturing.
2Ease of manufacture
If laser beam irradiation is performed to remove resin and wiring layers, then the opening is formed to expose semiconductor layer, but shock waves cause unevenness at the opening edge
Solution Approach 1:
The first laser beam irradiation step is performed as a preliminary action to remove the resin layer before the second laser beam irradiation step removes the wiring layer. By preparing the opening in stages, the shock waves from laser irradiation are distributed and controlled, preventing unevenness at the opening edge while still achieving complete exposure of the semiconductor layer.
3Device complexity
If conventional plasma etching is used after single-step laser grooving, then the process is simple, but die strength decreases due to reduced side surface smoothness
Solution Approach 1:
The laser grooving process is segmented into two steps with different laser beam parameters optimized for removing specific materials (resin layer first, then wiring layer). This segmentation maintains side surface smoothness during the grooving process, which in turn preserves die strength in the final plasma etching step, without significantly increasing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the smoothness of the side surfaces of the element chips, thereby enhancing their die strength and reducing the risk of unintended peeling during the manufacturing process.
Implementation Method 1
a first step of irradiating a first laser beam having a first pulse width to the resin layer, to remove the resin layer corresponding to the dicing region, and expose the wiring layer
Implementation Method 2
a second step of irradiating a second laser beam having a second pulse width shorter than the first pulse width to the wiring layer exposed in the first step, to remove the wiring layer corresponding to the dicing region and expose the semiconductor layer
Implementation Method 3
a plasma etching step of etching the semiconductor layer exposed from the opening with plasma, to obtain a plurality of element chips
Data Source
AI summary
An element chip manufacturing method incudes: a preparation step of preparing a substrate including a semiconductor layer, a wiring layer, and a resin layer, and including a dicing region; a laser grooving step of irradiating a laser beam to the dicing region, to form an opening therein; and a plasma etching step. The laser grooving step includes a first step of irradiating a first laser beam having a first pulse width to the resin layer, to expose the wiring layer, and a second step of irradiating a second laser beam having a second pulse width shorter than the first pulse width to the wiring layer exposed in the first step, to expose the semiconductor layer. In the first step, the irradiation of the first laser beam to the resin layer corresponding to the dicing region is performed a plurality of times along the longitudinal direction of the dicing region.