Element Chip Plasma Processing Suppresses Conductive Creep-Up
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Solution Overview
Problem
In the manufacturing of element chips, the direct contact between the circuit-formed surface and conductive materials during mounting leads to 'creep-up' of conductive materials, causing issues like short-circuits and increased current consumption due to the spreading of materials on side surfaces.
Innovation Solution
A method involving a substrate with insulating film-covered element regions, where plasma processing is used to divide the substrate, form recessed portions, and apply a protection film to suppress the creep-up of conductive materials during mounting by forming element chips with exposed insulating film corners and applying a protection film on the side surfaces and recessed portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the circuit-formed surface is allowed to directly contact conductive material during mounting, then the mounting process is simple, but the conductive material spreads on side surfaces causing short-circuits and increased current consumption
Solution Approach 1:
Recessed portions are formed in corner portions of the element chip before mounting, creating a physical barrier that prevents conductive material from spreading onto side surfaces during the mounting process
Solution Approach 2:
The recessed portions act as an intermediary structure between the circuit-formed surface and the conductive material, containing the conductive material within the recessed area and preventing it from reaching side surfaces
2Ease of manufacture
If the circuit-formed surface directly contacts conductive material, then mounting is straightforward, but unnecessary electric circuits are formed on side surfaces
Solution Approach 1:
Recessed portions are formed in corner portions of the element chip before mounting, creating a physical barrier that prevents conductive material from spreading onto side surfaces during the mounting process
Solution Approach 2:
The recessed portions act as an intermediary structure between the circuit-formed surface and the conductive material, containing the conductive material within the recessed area and preventing it from reaching side surfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively suppresses the creep-up of conductive materials during mounting, preventing short-circuits and unnecessary electric circuit formation, thereby improving mounting quality and reducing current consumption.
Implementation Method 1
perform plasma processing on the substrate that is supported on the carrier after the preparing step. The plasma processing step includes a dividing step, a recessed portion forming step that is performed after the dividing step, and a protection film forming step that is performed after the recessed portion forming step. In the dividing step, the substrate is divided into the element chips by etching the substrate of regions which are not covered by the etching-resistant layer in a depth direction of the substrate up to the first surface by exposing the second surface to first plasma
Implementation Method 2
In the recessed portion forming step, recessed portions are formed by retreating the insulating film that is exposed to the corner portion by exposing the element chips to second plasma in a state where the element chips are held spaced from each other on the carrier
Implementation Method 3
In the protection film forming step, a protection film is formed on the second surface of the element chips, the side surface of the element chips, and the recessed portion by exposing the element chips to third plasma generated during supplying of protection film forming gas in a state where the element chips are held spaced from each other on the carrier
Data Source
AI summary
In a plasma processing step that is used in the method of manufacturing the element chip for manufacturing a plurality of element chips by dividing a substrate which has a plurality of element regions and of which an element surface is covered by insulating film, the substrate is divided into element chips by exposing the substrate to a first plasma, element chips having first surface, second surface, and side surface are held spaced from each other on carrier, insulating film is in a state of being exposed, recessed portions are formed by retreating insulating film by exposing element chips to second plasma for ashing, and then recessed portions are covered by protection films by third plasma for formation of the protection film, thereby suppressing creep-up of the conductive material to side surface in the mounting step.


