Elongated Seed Quantum Dots for Thermal Stability

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Solution Overview

Problem

Conventional quantum dots exhibit significant thermal and flux droop, leading to a decrease in photoluminescence quantum yield with increasing temperatures and light intensities, which affects their luminescence performance.

Innovation Solution

A semiconductor structure comprising an elongated seed particle with a high aspect ratio, encapsulated in a shell of a larger bandgap semiconductor material, which maintains a high photoluminescence quantum yield across various temperatures and light fluxes, with the seed particle arranged either centered or off-center within the shell.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional quantum dots are used, then they can be prepared to luminesce in a particle-size-dependent fashion, but they exhibit pronounced thermal and flux droop leading to significant decrease of photoluminescence quantum yield with increasing temperatures and incident light intensities

Engineering Contradiction:
Improvephotoluminescence quantum yield stabilityVSAvoidtemperature resistance
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the morphological parameter of the seed particle from conventional shapes to an elongated shape with high aspect ratio (greater than 1.5). This parameter change in geometry fundamentally alters the thermal and flux droop characteristics, enabling the quantum dot to maintain high photoluminescence quantum yield (at least 65%) across a wide temperature range (20°C to 150°C) and high excitation light fluxes (up to 150 W/cm²) without significant degradation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a core-shell composite structure where the core consists of the elongated seed particle and the shell comprises a larger bandgap semiconductor material. This composite architecture combines the advantageous optical properties of the elongated seed with the protective and passivating effects of the shell material, resulting in enhanced thermal stability and resistance to luminescence quenching at high temperatures and light intensities

Inventive Principle:
Principle #40Composite materials

2Reliability

If conventional quantum dots are used, then they can be prepared to luminesce in a particle-size-dependent fashion, but they exhibit pronounced flux droop leading to significant decrease of photoluminescence quantum yield with increasing incident light intensities

Engineering Contradiction:
Improvephotoluminescence quantum yield stabilityVSAvoidincident light intensity resistance
Core Design Contradiction:
ReliabilityVSIllumination intensity

Solution Approach 1:

The patent changes the morphological parameter of the seed particle from conventional shapes to an elongated shape with high aspect ratio (greater than 1.5). This parameter change in geometry fundamentally alters the flux droop characteristics, enabling the quantum dot to maintain high photoluminescence quantum yield (at least 65%) across a wide range of excitation light fluxes (up to 150 W/cm²) without significant degradation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a core-shell composite structure where the core consists of the elongated seed particle and the shell comprises a larger bandgap semiconductor material. This composite architecture combines the advantageous optical properties of the elongated seed with the protective and passivating effects of the shell material, resulting in enhanced resistance to luminescence quenching at high light intensities

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor structure achieves a photoluminescence quantum yield of at least 65% across a temperature range of 20° C. to 150° C. and excitation light fluxes up to 150 W/cm², with minimal deviation, demonstrating superior resilience to luminescence quenching even at high optical fluxes and temperatures.

Implementation Method 1

the semiconductor structure, in particular the seed particle, produces photoluminescence emission when being irradiated with an excitation light

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS10421904B2Semiconductor structure and light-emitting device with semiconductor structures
Publication Date: 2019.09.24 OSRAM OPTO SEMICON GMBH & CO OHG
  • US10421904B2 patent drawing
  • US10421904B2 patent drawing
  • US10421904B2 patent drawing

AI summary

A semiconductor structure and a light-emitting device having a light-emitting diode and a plurality of semiconductor structures are disclosed. In an embodiment, the semiconductor structure includes an elongated seed particle including a first semiconductor material, wherein the seed particle has an aspect ratio of greater than 2.0, and wherein the semiconductor structure is part of or forms a quantum dot.