Elpasolite Scintillator Crystallization Yield via Molten Bath Excess

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Solution Overview

Problem

The challenge in manufacturing monocrystalline elpasolite scintillators lies in the formation of parasitic phases during crystallization, leading to inclusions and reduced yields, which affect the quality and efficiency of scintillation materials used for radiation detection.

Innovation Solution

A process involving a molten bath with an excess of component B, controlled through the 2s/r ratio, to achieve closer stoichiometric composition and reduce parasitic phase formation, allowing for the use of techniques like Czochralski and Bridgman growth to produce high-quality single-crystal elpasolite scintillators.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If crystallization is performed from a molten bath with stoichiometric composition, then the desired elpasolite phase can be obtained, but parasitic phases form leading to inclusions and reduced manufacturing yields

Engineering Contradiction:
Improvecrystal composition accuracyVSAvoidmanufacturing yield
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent changes the compositional parameter of the molten bath by introducing an excess of component B (alkali metal halide), shifting the system from stoichiometric to non-stoichiometric conditions. This parameter change prevents parasitic phase formation during crystallization while maintaining elpasolite phase purity, thereby resolving the contradiction between manufacturing precision and productivity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies partial or excessive action by adding an excess of component B beyond the stoichiometric requirement. This excessive addition of alkali metal halide creates a compositional buffer that suppresses parasitic phase formation, allowing high-yield production of pure elpasolite crystals without the trade-off normally associated with material waste

Inventive Principle:
Principle #16Partial or excessive action

2Reliability

If monocrystalline scintillators are used, then light extraction efficiency is improved, but manufacturing complexity increases due to single crystal growth requirements

Engineering Contradiction:
Improvelight extraction efficiencyVSAvoidcrystal growth process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent modifies the compositional parameters of the molten bath (excess component B) to facilitate monocrystal growth by reducing parasitic phase formation. This parameter change simplifies the crystal growth process compared to conventional stoichiometric methods, making monocrystalline production more reliable while maintaining high light extraction efficiency

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses the Czochralski or Bridgman method to grow monocrystals from the modified molten bath. By creating a controlled crystallization environment with excess component B, the process reliably produces high-quality monocrystals that copy the desired elpasolite structure without the defects and complexities associated with polycrystalline growth

Inventive Principle:
Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces parasitic phases, enhances manufacturing yields, and results in scintillators with improved light transmission and energy resolution, suitable for efficient radiation detection.

Implementation Method 1

comprising crystallization by cooling from a molten bath

Methodology Applied
Scientific EffectCrystallization: Crystallisation

Implementation Method 2

Scintillation is based on the physical principle of converting the energy of incident photons, X-rays or gamma rays or energetic particles into light in or near the visible domain

Methodology Applied
Scientific EffectScintillation: Scintillation

Data Source

PatentEP2984213B1Production of an elpasolite-type scintillator material
Publication Date: 2022.06.22 SAINT GOBAIN CRISTAUX & DETECTEURS
  • EP2984213B1 patent drawingFigure 1a~2c
  • EP2984213B1 patent drawing
  • EP2984213B1 patent drawing

AI summary

The invention relates to a method for producing a crystalline scintillator material with an elpasolite-type structure of a theoretical composition A2BC(1-y)MyX(6-y) wherein: A is selected from Cs, Rb, K, Na; B is selected from Li, K, Na; C is selected from the rare earths, Al, Ga; M is selected from the alkaline earths; X is selected from F, Cl, Br, I; and y is the atomic fraction of substitution of C by M and is comprised in the region of between 0 to 0.05; comprising the crystallisation thereof by cooling from a molten bath comprising r moles of A and s moles of B, the molten bath being in contact with the material containing A and B such that 2s/r is higher than 1. The method exhibits an improved production yield. Furthermore, the crystals produced can have compositions which are closer to the stoichiometry and have improved scintillation properties.