EM-Assisted Deposition Chamber for Void-Free Semiconductor Layers
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size, they face challenges with increased defect levels, impurities, and voids in deposited layers, which affect integration density and performance.
Innovation Solution
A deposition system utilizing electromagnetic radiation sources, such as UV or laser, to dissociate and excite precursor materials within a chamber, allowing for precise control of the deposition process to produce void-free, seam-free layers with reduced defects and impurities, and enabling tuning of layer composition through EM radiation intensity and wavelength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional deposition methods are used to deposit material layers, then the deposition process is simple and fast, but the deposited layers contain increased defects, impurities, and voids
Solution Approach 1:
The patent introduces electromagnetic radiation (UV or laser) as an intermediary energy source that mediates the deposition process. This radiation source acts as a mediator between the precursor material and the substrate, enabling precise control of material decomposition and deposition while reducing defects and impurities in the deposited layer.
Solution Approach 2:
The patent changes the energy state parameters of the precursor material by applying electromagnetic radiation. By controlling the intensity and wavelength of the radiation, the system precisely controls the decomposition and deposition parameters, transforming the deposition process from a simple thermal process to a controlled photochemical or photothermal process that produces higher quality layers.
2Productivity
If feature size is reduced to increase integration density, then more components can be integrated, but defect levels and impurities increase
Solution Approach 1:
The patent changes the deposition parameters through electromagnetic radiation control, enabling precise deposition at reduced feature sizes. By controlling the energy input through radiation intensity and wavelength, the system maintains layer quality and reduces defects even when scaling to smaller dimensions required for higher integration density.
Solution Approach 2:
The patent replaces conventional thermal or physical vapor deposition mechanisms with a photochemical/photothermal mechanism driven by electromagnetic radiation. This substitution enables more precise control at the nanoscale level, reducing mechanical and thermal stresses that cause defects during deposition, thereby maintaining reliability at reduced feature sizes.
3Productivity
If conventional deposition is used, then the process is fast and simple, but voids and seams form in the deposited layers
Solution Approach 1:
The patent maintains continuous deposition while applying electromagnetic radiation throughout the process. The continuous radiation exposure ensures uniform decomposition and deposition across the entire layer, preventing voids and seams from forming while maintaining deposition speed through efficient energy transfer and material utilization.
Solution Approach 2:
The patent replaces mechanical deposition control with optical/electromagnetic field control. This substitution enables more uniform energy distribution across the deposition area, ensuring consistent material decomposition and deposition that eliminates voids and seams while maintaining high deposition rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves the deposition of high-quality layers with reduced defects and impurities, enhancing integration density and performance by precisely controlling the deposition process, resulting in improved semiconductor device performance.
Implementation Method 1
one or more electromagnetic (EM) radiation sources, such as an ultraviolet (UV) source or a laser source, that dissociate, heat and/or excite precursor material within a chamber
Implementation Method 2
one or more electromagnetic (EM) radiation sources, such as an ultraviolet (UV) source or a laser source, that dissociate, heat and/or excite precursor material within a chamber
Implementation Method 3
A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material
Data Source
AI summary
A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.