Embedded 3D Package Antenna Structure for High-Frequency RF

The patent transitions from planar 2D antenna structures to three-dimensional 3D antenna structures by forming vertical TDV walls and gratings that extend through multiple dielectric layers. This dimensional change allows the antenna to achieve resonant cavities in the vertical direction, improving RF performance while maintaining a compact footprint suitable for integrated circuits.

The antenna structure is nested within the IC package by embedding TDV walls and gratings inside the dielectric layers surrounding the semiconductor die. The conductive elements are positioned within cavities formed in the dielectric material, creating a nested configuration where the antenna is integrated within the existing package structure rather than occupying additional external space.

The antenna structure is segmented into multiple discrete components including vertical TDV walls, TDV gratings, and conductive plates positioned at different heights and locations. These segmented elements work together to form resonant cavities that support high-frequency operation, while each individual element can be manufactured using standard semiconductor fabrication processes.

The patent introduces vertical dimensionality to the antenna structure by forming TDV walls and gratings that extend through multiple dielectric layers in the thickness direction. This 3D configuration creates resonant cavities that enable high-frequency RF transmission, overcoming the limitations of conventional planar 2D antenna structures while remaining compatible with existing manufacturing processes.