Embedded BJT Structure for Accurate CPU Hot Spot Temperature Sensing
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Solution Overview
Problem
Existing thermal sensors in integrated circuits, particularly those using bipolar junction transistors (BJTs), face challenges in accurately measuring temperature due to deviations from ideal characteristics, leading to errors in temperature measurements and reduced performance and accuracy in calibration processes.
Innovation Solution
The integration of BJTs into the digital Fin Boundary (FB) CPU region using standard cells, allowing for direct embedding of thermal sensors closer to CPU hot spots, reduces area penalties and improves thermal throttling by utilizing standard cells with different cell heights and widths to form BJT structures with larger emitter areas and smaller base areas, enhancing temperature detection precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thermal sensors are placed closer to CPU hot spots, then temperature detection precision is improved, but device complexity increases
Solution Approach 1:
The patent merges the thermal sensor functionality directly into the CPU core structure by integrating BJT-based temperature sensors within the digital Fin Boundary (FB) CPU region. This integration allows the thermal sensor to be positioned adjacent to CPU hot spots, improving temperature detection precision while avoiding the need for separate external sensor components.
Solution Approach 2:
The patent implements a nested structure where BJT transistor structures are embedded within the CPU region. The BJT structures are formed using well regions that are nested within the semiconductor substrate, with emitters, bases, and collectors arranged in a compact configuration that fits within the CPU footprint, thereby improving measurement precision without proportionally increasing overall device complexity.
2Area of stationary object
If standard cells with different cell heights and widths are used to form BJT structures, then area is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by using standard cells with different cell heights and widths specifically in the regions where BJT structures are formed. The emitters are formed with larger areas using standard cells optimized for emitter regions, while bases are formed with smaller areas using standard cells optimized for base regions. This localized optimization reduces the total area required for thermal sensors while maintaining manufacturing feasibility through standardized cell designs.
3Measurement precision
If BJT structures with larger emitter areas and smaller base areas are formed, then temperature measurement accuracy is improved, but device complexity increases
Solution Approach 1:
The patent implements parameter changes by systematically varying the dimensions of standard cells used to form BJT structures. Emitters are formed using standard cells with larger width and height parameters to maximize emitter area, while bases are formed using standard cells with smaller width and height parameters to minimize base area. These parameter optimizations improve temperature measurement accuracy by enhancing the BJT temperature sensing characteristics while maintaining a manageable device structure through the use of standardized cell parameters.
Data Source
AI summary
A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.