Embedded Bonding Layer in MEMS Cap Substrate
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Solution Overview
Problem
Existing methods for forming micro-electro mechanical system (MEMS) devices face issues with the quality and reliability of semiconductor devices due to squeezing and oxidation/hydrolysis problems during the eutectic bonding process, which affect the integrity of the bonding layers.
Innovation Solution
A cap structure is formed with a first bonding layer embedded in a cap substrate, where the bonding layer is surrounded by the cap substrate to prevent squeezing and oxidation, and an eutectic bonding process is performed with a cap substrate acting as a barrier to maintain the integrity of the bonding layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional eutectic bonding process is used to bond MEMS substrates, then bonding can be achieved, but the bonding layers are subjected to squeezing and oxidation/hydrolysis that degrade their quality and reliability
Solution Approach 1:
The bonding layer is embedded within the cap substrate structure, with the cap substrate forming a protective cavity that encloses the bonding layer. This nested configuration allows the bonding layer to be protected from external harmful factors while maintaining its bonding function.
Solution Approach 2:
The cap substrate acts as an intermediary barrier between the bonding layer and the external environment. It prevents direct contact between the bonding layer and oxidizing agents or squeezing forces, thereby protecting the bonding layer integrity.
2Ease of manufacture
If the bonding layer is exposed during the eutectic bonding process, then bonding can proceed, but oxidation and hydrolysis occur that reduce device quality
Solution Approach 1:
The cap substrate creates a protected environment or cavity that isolates the bonding layer from oxidizing atmospheres during the bonding process. This inert environment prevents oxidation and hydrolysis while allowing the bonding process to proceed.
Solution Approach 2:
The bonding layer is nested within the cap substrate cavity, providing physical protection from environmental degradation during manufacturing while maintaining accessibility for the bonding process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality and reliability of semiconductor device structures by preventing the squeezing and oxidation of bonding layers during the eutectic bonding process, ensuring a stable and reliable semiconductor device structure.
Implementation Method 1
the bonding layer is surrounded by the cap substrate to prevent squeezing and oxidation
Implementation Method 2
an eutectic bonding process is performed with a cap substrate acting as a barrier to maintain the integrity of the bonding layers
Data Source
AI summary
Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.