Embedded Bridge Protection Layer for Clean Via Formation
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Solution Overview
Problem
The challenge of maintaining via integrity, particularly via bottom critical dimension, taper angle, and cleanliness, is exacerbated by the scaling of bump pitch in electronic packaging, leading to issues like foreign material trapping and electromigration, which complicates fabrication and increases yield loss.
Innovation Solution
Implementing a protective layer over the pads to shield them from laser ablation, preventing localized melting and foreign material trapping, while also acting as a copper migration barrier, thus improving the adhesion and reducing electromigration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser drilling operations are used to form vias, then via bottom critical dimension and taper angle are controlled, but cleanliness at the bottom of the via is difficult to obtain
Solution Approach 1:
A protective layer is applied to the pad surface before laser via formation. This preliminary action prevents foreign material contamination during the laser drilling process, eliminating the need for subsequent cleaning processes while maintaining via bottom cleanliness.
Solution Approach 2:
The protective layer acts as an intermediary between the laser drilling process and the pad material. It prevents direct interaction that would cause foreign material trapping, while still allowing the laser to effectively form the via through the protective layer.
2Reliability
If additional cleaning processes are implemented to improve via cleanliness, then via integrity is improved, but fabrication complexity and time increase
Solution Approach 1:
The protective layer approach extracts the contamination prevention function from the complex multi-step cleaning process sequence. By preventing contamination upfront, it eliminates the need for wet and/or dry etching processes and copper pad surface treatment, simplifying the overall fabrication process.
Solution Approach 2:
The protective layer is applied in advance to prevent foreign material contamination, eliminating the need for subsequent cleaning steps. This preliminary protective action reduces fabrication complexity and extends the time needed for fabrication while maintaining via integrity.
3Length of moving object
If bump pitch is scaled down to enable smaller devices, then device size is reduced, but foreign material trapping and electromigration increase
Solution Approach 1:
The protective layer serves as an intermediary that prevents foreign material trapping at the pad-via interface, which becomes more critical as bump pitch scales down. It also acts as a barrier to copper migration, addressing electromigration issues that arise with reduced spacing between vias.
Solution Approach 2:
The protective layer is selectively applied to the pad areas where vias will be formed. This local application provides targeted protection against foreign material trapping and electromigration at critical interfaces, while allowing the rest of the structure to maintain its scaled-down dimensions.
4Reliability
If protective layer is applied to prevent foreign material trapping, then via cleanliness is improved, but fabrication process becomes more complex
Solution Approach 1:
The protective layer is applied as a preliminary step before via formation. This single upfront action prevents foreign material trapping during laser drilling, eliminating the need for multiple subsequent cleaning processes (wet and/or dry etching, copper pad surface treatment) and reducing overall fabrication complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The protective layer ensures cleaner via openings, reduces fabrication time and cost, and enhances device reliability by minimizing electrical shorts and electromigration.
Implementation Method 1
shield them from laser ablation, preventing localized melting
Implementation Method 2
preventing localized melting
Implementation Method 3
acting as a copper migration barrier, thus improving the adhesion and reducing electromigration
Data Source
AI summary
Embodiments disclosed herein include an apparatus that comprises a substrate with a component in the substrate, where the component comprises a pad. In an embodiment, a first layer is over the pad, and the first layer comprises silicon and nitrogen. In an embodiment, a second layer is over the substrate, and a via that passes through the first layer and the second layer, where the via contacts the pad.


