Embedded Interconnect Bridges for Fine-Pitch Glass Package Routing

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Solution Overview

Problem

Current multi-die semiconductor packaging architectures face challenges with larger form factors, poor yield, and reliability issues due to warpage and alignment problems in traditional substrates, particularly in achieving fine die-to-die interconnections and high interconnect density.

Innovation Solution

The use of a glass patch architecture with hybrid bonded interconnects and embedded interconnect bridges allows for finer contact pitches and higher interconnect density, enabling device-level attachment of dies to the package substrate, reducing warpage susceptibility, and improving yield through low total thickness variation and high aspect ratio patterning capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional substrate architectures are used for multi-die integration, then die-to-die interconnections can be established, but the form factor increases and warpage issues occur

Engineering Contradiction:
Improveinterconnection reliabilityVSAvoidpackage form factor
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The substrate is segmented into a glass core layer and separate build-up layers, allowing independent optimization of each layer. The glass core provides dimensional stability while the build-up layers provide interconnect routing, resolving the contradiction between reliable interconnections and compact form factor.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses a composite substrate structure combining glass core with organic or inorganic build-up layers. This composite approach leverages the dimensional stability of glass while incorporating the routing flexibility of other materials, achieving both compact form factor and reliable interconnections.

Inventive Principle:
Principle #40Composite materials

2Ease of operation

If traditional organic build-up layers are used for interconnect routing, then signal connection between dies is achieved, but manufacturing precision deteriorates due to warpage

Engineering Contradiction:
Improveinterconnect routingVSAvoidalignment precision
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

Different regions of the substrate have different properties: the glass core region provides dimensional stability for precise alignment, while the build-up layers provide routing flexibility. This local differentiation resolves the contradiction between ease of routing and manufacturing precision.

Inventive Principle:
Principle #3Local quality

3Quantity of substance

If finer contact pitches are achieved through device-level attachment, then interconnect density increases, but manufacturing complexity increases

Engineering Contradiction:
Improveinterconnect densityVSAvoidmanufacturing process complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The substrate and build-up layers are prepared in advance with pre-defined routing patterns and contact locations. This preliminary preparation simplifies the final assembly process, allowing high interconnect density to be achieved without proportionally increasing manufacturing complexity.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240186250A1Microelectronic Assembly Including Interconnect Bridges with Through Vias Embedded Therein
Publication Date: 2024.06.06 INTEL CORP
  • US20240186250A1 patent drawing
  • US20240186250A1 patent drawing
  • US20240186250A1 patent drawing

AI summary

A microelectronic assembly includes a substrate comprising: a panel including glass and defining an opening therein; an interconnect bridge (IB) in the opening and including interconnect pathways and IB through vias (IBTVs); and electrically conductive structures at a lower surface of the substrate to electrically couple the substrate to another component, at least some of the electrically conductive structures coupled to the IBTVs to form respective vertical electrical connections between the lower surface of the substrate and an upper surface of the substrate; and an electronic component (EC) layer on the upper surface of the substrate, the EC layer including a first active EC (AEC) and a second AEC electrically coupled to one another through the interconnect pathways, at least one of the first AEC or the second AECs further electrically coupled to one or more of the at least some of the electrically conductive structures.