Embedded Capacitor Low-Temperature Fabrication Heat Radiation
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Solution Overview
Problem
Existing embedded capacitors require high-temperature processing, which limits their application to PCBs with epoxy resin and increases manufacturing costs and yield issues.
Innovation Solution
A capacitor structure comprising a metallic substrate, metallic oxide layer, electrode layers, and an insulating layer, fabricated without a high-temperature baking process, using an oxidation process to form the metallic oxide layer and electrode layers, and integrating a via for electrical connection, allowing for superior heat radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If barium titanic oxide is molded at high temperature (900°C), then the capacitor achieves proper dielectric properties, but the epoxy resin PCB substrate cannot withstand the temperature and degrades
Solution Approach 1:
The patent changes the temperature parameter from high temperature (900°C for barium titanic oxide) to low temperature (room temperature or slightly elevated) processing. This is achieved by using aluminum as the metallic substrate material instead of barium titanic oxide, allowing the capacitor to be formed without high-temperature baking that would damage the epoxy resin PCB substrate.
Solution Approach 2:
The patent uses aluminum metallic substrate that can be oxidized in situ to form the dielectric layer, replacing the need for pre-sintered ceramic dielectrics. This approach uses a readily available, inexpensive metallic substrate that serves multiple functions: as the base for the capacitor structure and as the source material for the dielectric oxide layer.
2Reliability
If high temperature baking process is used, then the capacitor achieves proper formation, but the manufacturing cost increases and product yield decreases
Solution Approach 1:
The patent extracts and eliminates the high-temperature baking process from the manufacturing workflow. By using in-situ oxidation of aluminum substrate at low temperatures, the process removes the need for expensive high-temperature equipment and the associated quality control issues, thereby reducing manufacturing cost and improving yield.
Solution Approach 2:
The aluminum metallic substrate serves itself by being oxidized in-situ to form the dielectric layer. This self-oxidation process eliminates the need for separate dielectric deposition and high-temperature sintering steps, simplifying the manufacturing process and reducing costs.
3Reliability
If conventional embedded capacitor structure is used, then the capacitor can be formed, but heat radiation capability is insufficient
Solution Approach 1:
The patent employs a composite structure combining metallic substrate (aluminum), metallic oxide layer (aluminum oxide dielectric), and conductive electrode layers. This composite material system provides both the necessary capacitor functionality and superior thermal conduction properties through the metallic components, enabling effective heat radiation from the embedded capacitor.
Solution Approach 2:
The metallic substrate and electrode layers act as thermal intermediaries, conducting heat away from the dielectric layer and dissipating it through the PCB structure. The high thermal conductivity of the metallic components mediates the heat transfer, solving the heat radiation problem while maintaining capacitor functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the fabrication of capacitors without high-temperature processing, enhancing heat radiation and allowing for effective embedding in PCBs with resin materials, reducing manufacturing costs and improving yield.
Implementation Method 1
selectively forming a metallic oxide layer on the metallic substrate by performing an oxidation process with respect to the metallic substrate
Data Source
AI summary
Disclosed are an embedded capacitor and a method of fabricating the same. The capacitor includes a metallic substrate, a metallic oxide layer on the metallic substrate, a first electrode layer on a first surface of the metallic oxide layer, and a second electrode layer on a second surface of the metallic oxide layer.